| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
QPD2796 | 2.5 - 2.7 GHz, 200 Watt, 48 V GaN RF Power Transistor Qorvo's QPD2796 is a discrete GaN on SiC HEMT which operates from 2.5–2.7 GHz. The device is a single stage matched power amplifier transistor.\nThe QPD2796 can be used in Doherty architecture for the final stage of a base station power amplifier for macrocell high efficiency systems.\nQPD2796 can d • Frequency range: 2.5-2.7GHz\n• Drain voltage: 48V\n• Output power (P3dB): 200W\n• Maximum drain efficiency: 72%\n• Efficiency-Tuned P3dB gain: 20dB; | QORVO 威讯联合 |   | |
TELEFUNK ELECTRONIC CREATIVE TECHNOLOGIEN U2200B-FP TELEFUNK ELECTRONIC CREATIVE TECHNOLOGIEN U2200B-FP | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
Dual-Display White LED Driver with 3/2x Switched Capacitor Boost 文件：172.18 Kbytes Page：8 Pages | NSC 国半 | | ||
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QPD2796产品属性
- 类型
描述
- 频率最大值(MHz)：
2
- 增益(dB)：
23
- Psat(dBm)：
53
- PAE(%)：
72
- VD(V)：
48
- Idq(mA)：
360
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Qorvo |
99 |
||||||
QORVO |
24+ |
con |
10000 |
查现货到京北通宇商城 |
QPD2796规格书下载地址
QPD2796参数引脚图相关
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DdatasheetPDF页码索引
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