2.575 - 2.635 GHz, 220 Watt, 48 V Doherty GaN RF Power Transistor

Qorvo's QPD2730 is an asymmetric Doherty power device composed of pre-matched, discrete GaN on SiC HEMTs. The device operates from 2.575 to 2.635 GHz.\nQPD2730 can deliver PAVG of 36 W at 48 V operation.\nLead-free and ROHS compliant. • Frequency range: 2.575-2.635GHz, Band 7\n• Drain voltage: 48V\n• Output power (P3dB): 220W\n• Doherty efficiency: 53%\n• NI-780 ceramic package;

Silicon Diffused Power Transistor

GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers.

LOW INPUT CURRENT HIGH GAIN SPLIT DARLINGTON OPTOCOUPLERS

Description The 6N138/9 and HCPL2730/HCPL2731 optocouplers consist of an AlGaAs LED optically coupled to a high gain split darlington photodetector. The split darlington configuration separating the input photodiode and the first stage gain from the output transistor permits lower output saturat

3A High Current Low Dropout Voltage Regulator Adjustable & Fixed Output, Fast Response

PRODUCT DESCRIPTION The SPX2730/31/32/33 is a 3A high accuracy, low dropout voltage regulator (370mV(Typ)@ 3A). The SPX2730/31/32/33 is designed for low voltage application that requires lower dropout voltage and faster transient response. This device is an excellent choice for use in powering lo

LOW INPUT CURRENT HIGH GAIN SPLIT DARLINGTON OPTOCOUPLERS

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Thermal Monitor

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