300 W, 48 V, 1.8-2.2 GHz GaN RF Power Transistor

文件：884.76 Kbytes Page：14 Pages

Customer Specification

Construction 1) Conductor a) Material Silver Plated Copper, per ASTMB-298 and CID-A-A- 59569 b) Stranding Solid c) Diameter 0.005 2) Braid Data a) Nominal ID 1/8 (0.125) b) AWG of Ends 36 c) Number of Carriers 24 d) Nominal Percent Coverage 93 e) Total Number of Ends 120 f) Approx. Eq

36-44GHz Low Noise Amplifier

Description The circuit is a three-stage self biased wide band monolithic low noise amplifier, designed for 36GHz to 44GHz point to point and point to multipoint communication . The circuit is manufactured with a standard HEMT process : 0.25µm gate length, via holes through the substrate, air br

4G 2-way 10-200W (5-150W LED) Intelligent dimmer

DESCRIPTION 4G 2-way 10-200W (5-150W LED) Intelligent dimmer - Antique Brass ADDITIONAL FEATURES Trim, switch modes and reset dimmer all from the front of the plate via the control knob

Cable, P13 to stripped/tinned ends, 6 feet 24 AWG zip cord

文件：95.29 Kbytes Page：2 Pages

36-44GHz Low Noise Amplifier

文件：224.48 Kbytes Page：10 Pages