180 um Discrete GaAs pHEMT

Key Features • Frequency: DC – 20 GHz • Output Power (P1dB)1: 22 dBm • Typical Gain1: 14 dB • Typical PAE1dB 1: 55% • Noise Figure1: 1 dB • No Vias • Technology: 0.25 um GaAs pHEMT • Chip Dimensions: 0.41 x 0.34 x 0.10 mm

DC - 20 GHz, 180 um Discrete GaAs pHEMT Die

Qorvo's QPD2018D is a discrete 180-micron pHEMT which operates from DC to 20 GHz. The QPD2018D is designed using Qorvo's proven standard 0.25um power pHEMT production process. This process features advanced techniques to optimize microwave power and efficiency at high drain bias operating conditions • Frequency Range: DC - 20 GHz\n• Typical Output Power P1dB: 22 dBm\n• Typical Gain at 12 GHz: 14 dB\n• Typical PAE at 12 GHz: 55%\n• Typical NF at 12 GHz: 1 dB\n• No Vias\n• Chip Dimensions: 0.41 x 0.34 x 0.10 mm;

Correlated Double Sampling IC

■ Overview The AN2018S is used to reduce noise in CCD image sensor output signal. It performs correlated double sampling on image signal sent from a CCD sensor to output clearer image signal. ■ Features • Operating on low voltage (VCC=4.8V), consuming little current (ICC=12.7mA typ.)

Power Manager Gallium Arsenide Power Rectifier

Power Manager Gallium Arsenide Power Rectifier . . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction • Nitride Passivation for Stable Blocking C

Power Manager Gallium Arsenide Power Rectifier

Power Manager Gallium Arsenide Power Rectifier . . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction • Nitride Passivation for Stable Blocking C

Power Manager Gallium Arsenide Power Rectifier

Power Manager Gallium Arsenide Power Rectifier . . . ideally suited for high frequency power supplies, free wheeling diodes, and as polarity protection diodes, these state-of-the-art devices have the following features: • Planar Epitaxial Construction • Nitride Passivation for Stable Blocking C

Integrated Circuit 8-Channel Darlington Array/Driver

Description: Ideally suited for interfacing between low–level digital logic circuitry and high–power peripheral loads, the NTE2011 through NTE2015 are high–voltage, high–current Darlington arrays in an 18–Lead DIP type package and feature peak load current ratings to 600mA (NTE2016, NTE2019) or