10W, 32V, DC ??12 GHz, GaN RF Transistor

Product Features Frequency: DC to 12 GHz Output Power (P3dB): 11 W1 Linear Gain: 24.0 dB1 Typical PAE3dB: 68.8 1 Operating Voltage: 32 V Low thermal resistance package CW and Pulse capable 3 x 3 mm package Note 1: @ 2 GHz (Loadpull)

DC - 12 GHz, 10 Watt, 32 V GaN RF Transistor

The Qorvo QPD1022 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 12 GHz. This wideband device is a single stage unmatched power amplifier transistor in an over-molded plastic package. The wide bandwidth of the QPD1022 makes it suitable for many different applications from DC to • Frequency Range: DC - 12 GHz\n• Output Power (P3dB): 11.0 W at 2 GHz\n• Linear Gain: 24.0 dB typical at 2 GHz\n• Typical PAE3dB: 68.8 % at 2 GHz\n• Operating voltage: 32V\n• Low thermal resistance package\n• CW and Pulse capable\n• 3 x 3 mm package;

10W, 32V, DC ??12 GHz, GaN RF Transistor

文件：2.54407 Mbytes Page：23 Pages

10W, 32V, DC ??12 GHz, GaN RF Transistor

Product Features Frequency: DC to 12 GHz Output Power (P3dB): 11 W1 Linear Gain: 24.0 dB1 Typical PAE3dB: 68.8 1 Operating Voltage: 32 V Low thermal resistance package CW and Pulse capable 3 x 3 mm package Note 1: @ 2 GHz (Loadpull)

10W, 32V, DC ??12 GHz, GaN RF Transistor

Product Features Frequency: DC to 12 GHz Output Power (P3dB): 11 W1 Linear Gain: 24.0 dB1 Typical PAE3dB: 68.8 1 Operating Voltage: 32 V Low thermal resistance package CW and Pulse capable 3 x 3 mm package Note 1: @ 2 GHz (Loadpull)

10W, 32V, DC ??12 GHz, GaN RF Transistor

文件：2.54407 Mbytes Page：23 Pages

10W, 32V, DC ??12 GHz, GaN RF Transistor

文件：2.54407 Mbytes Page：23 Pages

10W, 32V, DC ??12 GHz, GaN RF Transistor

文件：2.54407 Mbytes Page：23 Pages

10W, 32V, DC ??12 GHz, GaN RF Transistor

文件：2.54407 Mbytes Page：23 Pages

Low-Cost PC Temperature Monitor and Fan Control ASIC

GENERAL DESCRIPTION The ADM1022 is a low cost temperature monitor and fan controller for microprocessor-based systems. The temperature of one or two remote sensor diodes may be measured, allowing monitoring of processor temperature in single- or dual-processor systems. Measured values can be rea

Photo Interrupters

Overview CNZ1021 series is a transmissive photosensor series in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to face each other,

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

General Description Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others. Polyfet™ process features gold metal for greatly extended lifetim

10-Bit, 12-Bit Binary Multiplying D/A Converter

文件：264.99 Kbytes Page：14 Pages

10-Bit, 12-Bit Binary Multiplying D/A Converter

文件：264.99 Kbytes Page：14 Pages