500W, 50V, 2.9 ??3.3 GHz, GaN RF IMFET

Frequency: 2.9 to 3.3 GHz Output Power (P3dB)1: 590 W Linear Gain1: 15.5 dB Typical DEFF3dB 1: 69 Operating Voltage: 50 V Low thermal resistance package Pulse capable

500 Watt, 50 Volt, 2.9 - 3.3 GHz, GaN RF IMFET

The QPD1019 is a 500 W (P3dB) internally matched discrete GaN on SiC HEMT which operates from 2.9 to 3.3 GHz and a 50V supply rail.   The device is GaN IMFET fully matched to 50 ohm in an industry standard air cavity package and is ideally suited for military radar.\nLead-free and ROHS compliant.\nE • Frequency Range: 2.9 - 3.3 GHz\n• Output Power (P3dB): 590 W at 3.1 GHz\n• Linear Gain: 15.5 dB typical at 3.1 GHz\n• Typical PAE3dB: 67% at 3.1 GHz\n• Operating Voltage: 50V\n• Low Thermal Resistance Package\n• Pulse Capable;

500W, 50V, 2.9 ??3.3 GHz, GaN RF IMFET

文件：2.22454 Mbytes Page：19 Pages

500W, 50V, 2.9 ??3.3 GHz, GaN RF IMFET

Frequency: 2.9 to 3.3 GHz Output Power (P3dB)1: 590 W Linear Gain1: 15.5 dB Typical DEFF3dB 1: 69 Operating Voltage: 50 V Low thermal resistance package Pulse capable

500W, 50V, 2.9 ??3.3 GHz, GaN RF IMFET

Frequency: 2.9 to 3.3 GHz Output Power (P3dB)1: 590 W Linear Gain1: 15.5 dB Typical DEFF3dB 1: 69 Operating Voltage: 50 V Low thermal resistance package Pulse capable

500W, 50V, 2.9 ??3.3 GHz, GaN RF IMFET

文件：2.22454 Mbytes Page：19 Pages

500W, 50V, 2.9 ??3.3 GHz, GaN RF IMFET

文件：2.22454 Mbytes Page：19 Pages

Low-voltage frequency synthesizer for radio telephones

GENERAL DESCRIPTION The UMA1019AM BICMOS device integrates prescalers, a programmable divider, and phase comparator to implement a phase-locked loop. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 5 V supplies. FEATURES • Low current from 3 V

Low-voltage frequency synthesizer for radio telephones

GENERAL DESCRIPTION The UMA1019M BICMOS device integrates prescalers, a programmable divider, and phase comparator to implement a phase-locked loop. The device is designed to operate from 3 NiCd cells, in pocket phones, with low current and nominal 5 V supplies. FEATURES • Low current from 3 V

METAL GATE RF SILICON FET

文件：37.52 Kbytes Page：4 Pages

METAL GATE RF SILICON FET

文件：37.52 Kbytes Page：4 Pages

PATENTED GOLD METALIZED SILICON GATE ENHANCEMENT MODE RF POWER VDMOS TRANSISTOR

文件：38.1 Kbytes Page：2 Pages