DC ??1.7 GHz, 50 V, 500 W GaN RF Transistor

Key Features Frequency: DC to 1.7 GHz Output Power (P3dB)1: 680 W Linear Gain1: 23.9 dB Typical PAE3dB 1: 77.4 Operating Voltage: 50 V CW and Pulse capable Note 1: @ 1.3 GHz Load Pull

50 V, 500 W GaN RF Transistor

文件：1.86327 Mbytes Page：25 Pages

DC ??1.7 GHz, 50 V, 500 W GaN RF Transistor

Key Features Frequency: DC to 1.7 GHz Output Power (P3dB)1: 680 W Linear Gain1: 23.9 dB Typical PAE3dB 1: 77.4 Operating Voltage: 50 V CW and Pulse capable Note 1: @ 1.3 GHz Load Pull

DC – 1.7 GHz, 50 V, 500 W GaN RF Transistor

Key Features • Frequency: DC to 1.7 GHz • Output Power (P3dB): 537 W • Linear Gain: 18 dB • Typical Drain Efficiency at 3 dB compresion: 67 • Operating Voltage: 50 V • CW and Pulse capable

500 Watt, 50 Volt, DC - 1.7 GHz, GaN RF Transistor

The Qorvo QPD1016L is a 500 W (P3dB) pre-matched discrete GaN on SiC HEMT which operates from DC to 1.7 GHz and 50 V supply.   The device is in an industry standard air cavity package and is ideally suited for IFF, avionics, military and civilian radar, and test instrumentation.  The device can supp • Frequency Range: DC - 1.7 GHz\n• Linear Gain: 18 dB typical at 1.3 GHz\n• Operating voltage: 50V\n• CW and pulse capable\n;

DC – 1.7 GHz, 50 V, 500 W GaN RF Transistor

Key Features • Frequency: DC to 1.7 GHz • Output Power (P3dB): 537 W • Linear Gain: 18 dB • Typical Drain Efficiency at 3 dB compresion: 67 • Operating Voltage: 50 V • CW and Pulse capable

DC – 1.7 GHz, 50 V, 500 W GaN RF Transistor

Key Features • Frequency: DC to 1.7 GHz • Output Power (P3dB): 537 W • Linear Gain: 18 dB • Typical Drain Efficiency at 3 dB compresion: 67 • Operating Voltage: 50 V • CW and Pulse capable

DC – 1.7 GHz, 50 V, 500 W GaN RF Transistor

Key Features • Frequency: DC to 1.7 GHz • Output Power (P3dB): 537 W • Linear Gain: 18 dB • Typical Drain Efficiency at 3 dB compresion: 67 • Operating Voltage: 50 V • CW and Pulse capable

50 V, 500 W GaN RF Transistor

文件：1.86327 Mbytes Page：25 Pages

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