10W, 50V, DC ??4 GHz, GaN RF Transistor

Product Features Frequency: DC to 4 GHz Output Power (P3dB): 11 W1 Linear Gain: 24.7 dB1 Typical DEFF3dB: 711 Operating Voltage: 50 V Low thermal resistance package CW and Pulse capable 3 x 3 mm package Note 1: @ 2 GHz (Loadpull)

DC - 4 GHz, 10 Watt, 50 V GaN RF Transistor

Qorvo's QPD1010 is a 10 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 4 GHz. The device is constructed with Qorvo's proven QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can po • Frequency range: DC - 4 GHz\n• Output power (P3dB): 11 W at 2 GHz\n• Linear gain: 24.7 dB typical at 2 GHz\n• Typical PAE3dB: 70% at 2 GHz\n• Operating voltage: 50V\n• Low thermal resistance package\n• CW and pulse capable\n• 3 x 3 mm package;

10W, 50V, DC ??4 GHz, GaN RF Transistor

Product Features Frequency: DC to 4 GHz Output Power (P3dB): 11 W1 Linear Gain: 24.7 dB1 Typical DEFF3dB: 711 Operating Voltage: 50 V Low thermal resistance package CW and Pulse capable 3 x 3 mm package Note 1: @ 2 GHz (Loadpull)

10W, 50V, DC ??4 GHz, GaN RF Transistor

Product Features Frequency: DC to 4 GHz Output Power (P3dB): 11 W1 Linear Gain: 24.7 dB1 Typical DEFF3dB: 711 Operating Voltage: 50 V Low thermal resistance package CW and Pulse capable 3 x 3 mm package Note 1: @ 2 GHz (Loadpull)

Evaluation Board

Evaluation Board

1.0 AMPERE SILICON MINIATURE SINGLE- PHASE BRIDGES(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Amperes FEATURES • Ratings to 1000V PRV • Surge overload rating: 30 Amperes peak • Ideal for printed circuit board • Reliable low cost construction utilizing molded plastic technique • Mounting position:Any

DUAL-IN-LINE GLASS PASSIVATED SINGLE-PHASE BRIDGE RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes)

VOLTAGE - 50 to 1000 Volts CURRENT - 1.0~1.5 Amperes FEATURES ● Plastic material used carries Underwriters Laboratory recognition 94V-O ● Low leakage ● Surge overload rating— 30~50 amperes peak ● Ideal for printed circuit board ● Exceeds environmental standards of MIL-S-19500/228

FAST SWITCHING PLASTIC DIODES(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere)

VOLTAGE 50 to 1000 Volts CURRENT 1.0 Amperes FEATURES • High current capability. • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound. • Low leakage. • Exceeds environmental standards of MIL-S-

ULTRAFAST SWITCHING RECTIFIER(VOLTAGE - 50 to 1000 Volts CURRENT - 1.0 Ampere)

ULTRAFAST RECOVERY RECTIFIER VOLTAGE 50 to 1000 Volts CURRENT 1.0 Amperes FEATURES • Plastic package has Underwriters Laboratory Flammability Classification 94V-O utilizing Flame Retardant Epoxy Molding Compound • Exceeds environmental standards of MIL-S-19500/228. • Ultra Fast switchin

GaAs N-Channel MES IC

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