15W, 50V, DC – 4 GHz, GaN RF Transistor

Product Features • Frequency: DC to 4 GHz • Output Power (P3dB): 17 W at 2 GHz • Linear Gain: 24 dB at 2 GHz • Typical PAE3dB: 72 at 2 GHz • Operating Voltage: 50 V • Low thermal resistance package • CW and Pulse capable • 3 x 3 mm package

DC - 4 GHz, 15 Watt, 50 V GaN RF Transistor

The Qorvo QPD1009 is a 15 W (P3dB) discrete GaN on SiC HEMT which operates from DC to 4 GHz. The device is constructed with Qorvo's proven QGaN25HV process, which features advanced field plate techniques to optimize power and efficiency at high drain bias operating conditions. This optimization can • Frequency range: DC - 4 GHz\n• Output power (P3dB): 17 W at 2 GHz\n• Linear gain: 24 dB typical at 2 GHz\n• Typical PAE3dB: 72% at 2 GHz\n• Operating voltage: 50V\n• Low thermal resistance package\n• CW and pulse capable\n• 3 x 3 mm package;

15W, 50V, DC ??4 GHz, GaN RF Transistor

文件：1.54768 Mbytes Page：28 Pages

DC-4 GHz 15W 50V GaN RF Tr

DC-4 GHz 15W 50V GaN RF Tr

15W, 50V, DC – 4 GHz, GaN RF Transistor

Product Features • Frequency: DC to 4 GHz • Output Power (P3dB): 17 W at 2 GHz • Linear Gain: 24 dB at 2 GHz • Typical PAE3dB: 72 at 2 GHz • Operating Voltage: 50 V • Low thermal resistance package • CW and Pulse capable • 3 x 3 mm package

15W, 50V, DC – 4 GHz, GaN RF Transistor

Product Features • Frequency: DC to 4 GHz • Output Power (P3dB): 17 W at 2 GHz • Linear Gain: 24 dB at 2 GHz • Typical PAE3dB: 72 at 2 GHz • Operating Voltage: 50 V • Low thermal resistance package • CW and Pulse capable • 3 x 3 mm package

15W, 50V, DC – 4 GHz, GaN RF Transistor

Product Features • Frequency: DC to 4 GHz • Output Power (P3dB): 17 W at 2 GHz • Linear Gain: 24 dB at 2 GHz • Typical PAE3dB: 72 at 2 GHz • Operating Voltage: 50 V • Low thermal resistance package • CW and Pulse capable • 3 x 3 mm package

15W, 50V, DC – 4 GHz, GaN RF Transistor

Product Features • Frequency: DC to 4 GHz • Output Power (P3dB): 17 W at 2 GHz • Linear Gain: 24 dB at 2 GHz • Typical PAE3dB: 72 at 2 GHz • Operating Voltage: 50 V • Low thermal resistance package • CW and Pulse capable • 3 x 3 mm package

15W, 50V, DC ??4 GHz, GaN RF Transistor

文件：1.54768 Mbytes Page：28 Pages

Photo Interrupters

Overview CNZ1021 series is a transmissive photosensor series in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to face each other,

Photo Interrupters

Overview CNZ1021 series is a transmissive photosensor series in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity phototransistor is used as the light detecting element. The two elements are arranged so as to face each other,

Integrated Circuit AF Power Amplifier, 1W

Integrated Circuit AF Power Amplifier, 1W

HIGH-SIDE CURRENT MONITOR

DESCRIPTION The ZXCT1009 is a high side current sense monitor. Using this device eliminates the need to disrupt the ground plane when sensing a load current. It takes a high side voltage developed across a current shunt resistor and translates it into a proportional output current. A user

Reflective Photosensor

文件：49.26 Kbytes Page：2 Pages