45 W, 48 V, DC to 5 GHz, GaN RF Power Transistor

Key Features • Operating Frequency Range: DC to 5 GHz • Operating Drain Voltage: +48 V • Maximum Output Power (PSAT): 49.0 W (1) • Maximum Drain Efficiency: 71.9 (1) • Efficiency-Tuned P3dB Gain: 22.1 dB (1) • Surface Mount Plastic Package

45 Watt, 48 Volt, DC - 4 GHz GaN RF Power Transistor

The QPD0030 is a 45W (P3dB) unmatched discrete GaN on SiC HEMT which operates from DC to 5GHz on a 48V supply rail. It is ideally suited for basestation, radar and communications applications and can support both CW and pulsed mode of operations.\nThe QPD0030 can be used in Doherty architecture for • Frequency range: DC to 5 GHz\n• Linear Gain: 22.3 dB typical at 2.2 GHz\n• Operating voltage: 48V\n• CW and Pulse capable;

45 W, DC to 4 GHz 48V GaN RF Power Transistor

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45 W, 48 V, DC to 5 GHz, GaN RF Power Transistor

Key Features • Operating Frequency Range: DC to 5 GHz • Operating Drain Voltage: +48 V • Maximum Output Power (PSAT): 49.0 W (1) • Maximum Drain Efficiency: 71.9 (1) • Efficiency-Tuned P3dB Gain: 22.1 dB (1) • Surface Mount Plastic Package

45 W, 48 V, DC to 5 GHz, GaN RF Power Transistor

Key Features • Operating Frequency Range: DC to 5 GHz • Operating Drain Voltage: +48 V • Maximum Output Power (PSAT): 49.0 W (1) • Maximum Drain Efficiency: 71.9 (1) • Efficiency-Tuned P3dB Gain: 22.1 dB (1) • Surface Mount Plastic Package

45 W, 48 V, DC to 5 GHz, GaN RF Power Transistor

Key Features • Operating Frequency Range: DC to 5 GHz • Operating Drain Voltage: +48 V • Maximum Output Power (PSAT): 49.0 W (1) • Maximum Drain Efficiency: 71.9 (1) • Efficiency-Tuned P3dB Gain: 22.1 dB (1) • Surface Mount Plastic Package

45 W, 48 V, DC to 5 GHz, GaN RF Power Transistor

Key Features • Operating Frequency Range: DC to 5 GHz • Operating Drain Voltage: +48 V • Maximum Output Power (PSAT): 49.0 W (1) • Maximum Drain Efficiency: 71.9 (1) • Efficiency-Tuned P3dB Gain: 22.1 dB (1) • Surface Mount Plastic Package

Amplifier, Power, 1W 5.0-9.0 GHz

Description The MAAPGM0030 is a packaged, single stage, 1W power amplifier with on-chip bias networks in a bolt down ceramic package, allowing easy assembly. This product is fully matched to 50 ohms on both the input and output. It can be used as a power amplifier stage or as a driver stage in hi

MOS FET Power Amplifier

Features • High stability: Load VSWR = 20 : 1 • Low power control current: 400 µA • Thin package: 5 mmt

TRANSMIT AND RECEIVE AGC AMPLIFIERS FOR CDMA CELLULAR /PCS PHONES

Cellular and Personal Communication Services (PCS) phones that are based on Code Division Multiple Access (CDMA) need careful regulation of signal levels on both the forward and reverse channels. In the reverse channel (mobile phone to base station) a transmit automatic gain control (AGC) amplifie

SMPTE 292M/259M Digital Video Serializer with Video and Ancillary Data FIFOs and Integrated Cable Driver

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SMPTE 292M/259M Digital Video Serializer with Video and Ancillary Data FIFOs and Integrated Cable Driver

文件：732.85 Kbytes Page：29 Pages