45 W, 48 V, DC to 5 GHz, GaN RF Power Transistor

Key Features • Operating Frequency Range: DC to 5 GHz • Operating Drain Voltage: +48 V • Maximum Output Power (PSAT): 49.0 W (1) • Maximum Drain Efficiency: 71.9 (1) • Efficiency-Tuned P3dB Gain: 22.1 dB (1) • Surface Mount Plastic Package

45 W, DC to 4 GHz 48V GaN RF Power Transistor

文件：472.49 Kbytes Page：8 Pages

45 Watt, 48 Volt, DC - 4 GHz GaN RF Power Transistor

45 W, 48 V, DC to 5 GHz, GaN RF Power Transistor

Key Features • Operating Frequency Range: DC to 5 GHz • Operating Drain Voltage: +48 V • Maximum Output Power (PSAT): 49.0 W (1) • Maximum Drain Efficiency: 71.9 (1) • Efficiency-Tuned P3dB Gain: 22.1 dB (1) • Surface Mount Plastic Package

45 W, 48 V, DC to 5 GHz, GaN RF Power Transistor

Key Features • Operating Frequency Range: DC to 5 GHz • Operating Drain Voltage: +48 V • Maximum Output Power (PSAT): 49.0 W (1) • Maximum Drain Efficiency: 71.9 (1) • Efficiency-Tuned P3dB Gain: 22.1 dB (1) • Surface Mount Plastic Package

45 W, 48 V, DC to 5 GHz, GaN RF Power Transistor

Key Features • Operating Frequency Range: DC to 5 GHz • Operating Drain Voltage: +48 V • Maximum Output Power (PSAT): 49.0 W (1) • Maximum Drain Efficiency: 71.9 (1) • Efficiency-Tuned P3dB Gain: 22.1 dB (1) • Surface Mount Plastic Package

45 W, 48 V, DC to 5 GHz, GaN RF Power Transistor

Key Features • Operating Frequency Range: DC to 5 GHz • Operating Drain Voltage: +48 V • Maximum Output Power (PSAT): 49.0 W (1) • Maximum Drain Efficiency: 71.9 (1) • Efficiency-Tuned P3dB Gain: 22.1 dB (1) • Surface Mount Plastic Package

Inductive Sensors

BES 516-300-S260-S4-D Basic features Approval/Conformity CE UKCA WEEE Basic standard IEC 60947-5-2

BALL KNOB

文件：69.42 Kbytes Page：1 Pages

Original Strain Relief Bushing Assembly Pliers Instructions and Spare Parts

文件：133.27 Kbytes Page：1 Pages

Original Strain Relief Bushing Assembly Pliers Directory and Jaw Settings Guide

文件：74 Kbytes Page：1 Pages

Inductive Sensors

文件：98.49 Kbytes Page：2 Pages