35 W, 48 V, DC ??6 GHz, GaN RF Power Transistor

文件：1.029849 Mbytes Page：11 Pages

35 W, 48 V, DC - 6 GHz GaN RF Power Transistor

35 W, 48 V, DC ??6 GHz, GaN RF Power Transistor

文件：1.029849 Mbytes Page：11 Pages

35 W, 48 V, DC ??6 GHz, GaN RF Power Transistor

文件：1.029849 Mbytes Page：11 Pages

35 W, 48 V, DC ??6 GHz, GaN RF Power Transistor

文件：1.029849 Mbytes Page：11 Pages

10.1 Medical Grade Tablet with Qualcomm® Snapdragon™ 660

Features ƒ Equipped with DeviceOn/iService software for remote device management ƒ Qualcomm SDA660 with Android 10 ƒ 10.1 Full-HD capacitive touch screen designed with scratch-resistant Corning® Gorilla® Glass ƒ Supports glove mode and stylus with palm detection to expand usability ƒ Integra

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Lockit™ Strain Relief Pre-Assembly Equipment Directory

文件：180.64 Kbytes Page：1 Pages

AMCC Series Cut Core FINEMET® F3CC Series Cut Core

文件：949.92 Kbytes Page：4 Pages