75Ω Absorptive High Isolation SPDT Switch

Key Features  5 MHz to 3000 MHz Operation  Symmetric SPDT  Non-Reflective (RF1, RF2)  Terminated All-Off State  No Blocking Caps Required Unless Voltage on RF Line  High Isolation: >65 dB at 1.2 GHz  High Input IP3: >60 dBm  Option to Turn Off Negative Voltage Generator and Supply

75 Ohm Absorptive Switch

The QPC3024 is a 75 ohm Silicon on Insulator (SOI) single-pole, double throw (SPDT) switch designed for use in CATV, satellite set top, and other high performance communications systems. It offers a high isolation symmetric topology with excellent linearity and power handling capability. No blocking • 75 ohm Absorptive\n• High Isolation: > 65dB @ 1.2GHz\n• 3-5V Supply\n• High Input IP3: >60 dBm;

75Ω Absorptive High Isolation SPDT Switch

Key Features  5 MHz to 3000 MHz Operation  Symmetric SPDT  Non-Reflective (RF1, RF2)  Terminated All-Off State  No Blocking Caps Required Unless Voltage on RF Line  High Isolation: >65 dB at 1.2 GHz  High Input IP3: >60 dBm  Option to Turn Off Negative Voltage Generator and Supply

75Ω Absorptive High Isolation SPDT Switch

Key Features  5 MHz to 3000 MHz Operation  Symmetric SPDT  Non-Reflective (RF1, RF2)  Terminated All-Off State  No Blocking Caps Required Unless Voltage on RF Line  High Isolation: >65 dB at 1.2 GHz  High Input IP3: >60 dBm  Option to Turn Off Negative Voltage Generator and Supply

75Ω Absorptive High Isolation SPDT Switch

Key Features  5 MHz to 3000 MHz Operation  Symmetric SPDT  Non-Reflective (RF1, RF2)  Terminated All-Off State  No Blocking Caps Required Unless Voltage on RF Line  High Isolation: >65 dB at 1.2 GHz  High Input IP3: >60 dBm  Option to Turn Off Negative Voltage Generator and Supply

75Ω Absorptive High Isolation SPDT Switch

Key Features  5 MHz to 3000 MHz Operation  Symmetric SPDT  Non-Reflective (RF1, RF2)  Terminated All-Off State  No Blocking Caps Required Unless Voltage on RF Line  High Isolation: >65 dB at 1.2 GHz  High Input IP3: >60 dBm  Option to Turn Off Negative Voltage Generator and Supply

1 WATT CAPABILITY WITH PROPER HEAT SINKING

• 1N3016B THRU 1N3045B AVAILABLE IN JANHC PER MIL-PRF-19500/115 • 1 WATT CAPABILITY WITH PROPER HEAT SINKING • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES, WITH THE EXCEPTION OF SOLDER REFLOW

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Light Emitting Diode (LED)

Description: The NTE3020 through NTE3024 LEDs offer a variety of lens effects and color availability. The Red (NTE3020) source color device is made with Gallium Arsenide Phosphide on Gallium Arsenide Red Light Emitting Diode. The High Efficiency Red (NTE3022) and Orange (NTE3023) source color d

UHF LINEAR POWER TRANSISTOR

The TP3024B is a balanced transistor designed specifically for use in cellular radio systems. This device permits the design of a Class AB push–pull, high gain, broadband amplifier having a high degree of linearity without the need for complicated biasing circuitry. • Specified 26 Volts, 960 MHz