15.5 dB, 5 MHz - 210 MHz, DOCSIS 3.1 Reverse Amplifier

The QPB2318 is an HBT RF balanced Amplifier IC operating as a return path amplifier capable of suporting DOCSIS 3.1 applications. This IC is designed to provide low noise, High Gain for 5 - 210 MHz interface using 8 V power supply.  The QPB2318 is packaged in a SOIC-8 with externally adjustable bias • High Linearity Push-Pull MMIC\n• 5 MHz - 210 MHz Operation\n• Gain; 15.5 dB typical\n• 3.8 dB NF\n• Adjustable Bias using external Resistors\n• SOIC-8;

15 dB Balanced Return Path Amplifier 5 ??210 MHz

文件：1.37205 Mbytes Page：21 Pages

15 dB Balanced Return Path Amplifier 5 ??210 MHz

文件：1.37224 Mbytes Page：21 Pages

15 dB Balanced Return Path Amplifier 5 ??210 MHz

文件：1.37224 Mbytes Page：21 Pages

15 dB Balanced Return Path Amplifier 5 ??210 MHz

文件：1.37205 Mbytes Page：21 Pages

15 dB Balanced Return Path Amplifier 5 ??210 MHz

文件：1.37205 Mbytes Page：21 Pages

15 dB Balanced Return Path Amplifier 5 ??210 MHz

文件：1.37224 Mbytes Page：21 Pages

15 dB Balanced Return Path Amplifier 5 ??210 MHz

文件：1.37224 Mbytes Page：21 Pages

15 dB Balanced Return Path Amplifier 5 ??210 MHz

文件：1.37205 Mbytes Page：21 Pages

15 dB Balanced Return Path Amplifier 5 ??210 MHz

文件：1.37205 Mbytes Page：21 Pages

15 dB Balanced Return Path Amplifier 5 ??210 MHz

文件：1.37224 Mbytes Page：21 Pages

Marktech 5mm Ultra Bright Y G LEDs

FEATURES • Excellent on/off contrasts • Low drive current • High intensity green and InGaAlP yellow • Choice of lens color • Can be packaged on tape in a reel or in a box

Silicon NPN Transistor High Voltage, High Speed Switch

Description: The NTE2318 is a high–voltage, high–speed, switching NPN transistor with an internal damper diode in a TO218 type package. This device is specifically designed for use in large screen color deflection circuits. Features: ● Collector–Emitter Voltage: VCE = 1500V ● Collector–Emitter

LINEAR BROADBAND AMPLIFIER

Product Description The RF2318 is a broadband general purpose, low cost high linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily cascadable 75Ω gain block. The gain flatne

LINEAR BROADBAND AMPLIFIER

Product Description The RF2318 is a broadband general purpose, low cost high linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily cascadable 75Ω gain block. The gain flatne

LINEAR BROADBAND AMPLIFIER

Product Description The RF2318 is a broadband general purpose, low cost high linearity RF amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as an easily cascadable 75Ω gain block. The gain flatne