1Megabit(128Kx8-bit/64Kx16-bit)CMOS5.0Volt-only,BootSectorFlashMemory

GENERALDESCRIPTION TheAm29F100isa1Mbit,5.0Volt-onlyFlashmemoryorganizedas131,072bytesor65,536words.TheAm29F100isofferedin44-pinSOand48-pinTSOPpackages.Word-widedataappearsonDQ0-DQ15;byte-widedataonDQ0-DQ7.Thedeviceisdesignedtobeprogrammedin-systemwith

iscN-ChannelMOSFETTransistor

FEATURES ·DrainCurrent–ID=30A@TC=25℃ ·DrainSourceVoltage- :VDSS=1000V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=0.44Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DC

1Mbit128Kbx8or64Kbx16,BootBlockSingleSupplyFlashMemory

DESCRIPTION TheM29F100isanon-volatilememorythatmaybeerasedelectricallyattheblockorchiplevelandprogrammedin-systemonaByte-by-ByteorWordby-Wordbasisusingonlyasingle5VVCCsupply.ForProgramandEraseoperationsthenecessaryhighvoltagesaregeneratedinternally.Thede

1000V,29A,0.46廓Max,trr??70nsN-ChannelFREDFET

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N-ChannelFREDFET

文件：129.57 Kbytes Page：4 Pages