P-Ch 20V Fast Switching MOSFETs

The QM2401C1 is the highest performance trenchP-ch MOSFETs with extremehigh cell density, which provide excellent RDSON and gate chargefor most of thesmall power switching and loadswitch applications.\n\n The QM2401C1 meet the RoHS and GreenProduct requirement , with full functionreliability appr ·Advanced high cell density Trench technology.\n ·Super Low Gate Charge.\n ·Excellent CdV/dt effect decline.\n ·Green Device Available.;

P-Channel 20V Fast Switching MOSFET

The QM2401D is a high performance trench P-channel MOSFET which utilizesextremely high cell density to provide low Rdson and gate charge characteristics.It is ideally suited to support synchronous buck converter applications. \n\n The QM2401D meets RoHS and Green Product requirements while supp • Advanced high cell density Trench technology\n• Super Low Gate Charge\n• Excellent CdV/dt effect decline\n• Green Device Available;

P-Ch 20V Fast Switching MOSFETs

The QM2401K is the highest performance trenchP-ch MOSFETs with extremehigh cell density ,which provide excellent RDSON and gate charge f or most of thesynchronous buck converter a pplications.\n\n The QM2401K meet the RoHS and Green Product r equirement , with full function reliabilityapproved. • Advanced high cell density Trench technology.\n• Super Low Gate Charge.\n• Excellent CdV/dt effect decline.\n• Green Device Available.;

P-Channel 20-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 Rg Tested • Compliant to RoHS Directive 2002/95/EC APPLICATIONS • Load Switch • PA Switch • DC/DC Converters

P-Channel 30-V (D-S) MOSFET

FEATURES • Halogen-free According to IEC 61249-2-21 Available • TrenchFET® Power MOSFET APPLICATIONS • Load Switch

P-Channel 20 V (D-S) MOSFET

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P-Ch 20V Fast Switching MOSFETs

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P-Channel 20V Fast Switching MOSFET

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P-Ch 20V Fast Switching MOSFETs

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2.4 GHz DOWNCONVERTER GaAs MONOLITHIC INTEGRATED CIRCUIT

The MRFIC2401 is a GaAs low–noise amplifier and downmixer in a low–cost 16 lead plastic package designed for use in the 2.4 to 2.5 GHz Industrial– Scientific–Medical (ISM) band. The design is optimized for efficiency at 5.0 Volt operation at 2.45 GHz but is usable from 2.0 to 3.0 GHz in applicatio

Silicon PNP Transistor RF Stages in FM Front Ends

Description: The NTE2401 is a silicon PNP transistor in a plastic SOT–23 type surface mount package designed for use in RF stages in FM front–ends in common base configuration for SMD applications.

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planer transistor For general amplification ■ Features ● Two elements incorporated into one package. (Base-coupled transistors) ● Reduction of the mounting area and assembly cost by one half.

Silicon PNP epitaxial planer transistor

Silicon PNP epitaxial planar type For general amplification ■ Features • Two elements incorporated into one package (Base-coupled transistors) • Reduction of the mounting area and assembly cost by one half

FAMILY OF 900-nA/Ch RAIL-TO-RAIL INPUT/OUTPUT OPERATIONAL AMPLIFIERS WITH REVERSE BATTERY PROTECTION

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