| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
N-ChannelEnhancementModeFieldEffectTransistor FEATURES TypeVDSSRDS(ON)ID@VGS CEP01N65650V10.5Ω1.3A10V CEF01N65650V10.5Ω1.3A10V CEB01N65650V10.5Ω1.3A10V ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■ | CETChino-Excel Technology 华瑞华瑞股份有限公司 |  |   | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■650V,1.2A,RDS(ON)=10.5Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES 650V,0.9A,RDS(ON)=15W@VGS=10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. Leadfreeproductisacquired. | CET-MOSCET-MOS Technology Corp. 华瑞华瑞功率电子股份有限公司 |  | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES ■650V,0.9A,RDS(ON)=15Ω@VGS=10V. ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■Leadfreeproductisacquired. ■TO-251&TO-252package. | CETChino-Excel Technology 华瑞华瑞股份有限公司 | | | |
N-ChannelEnhancementModeFieldEffectTransistor FEATURES TypeVDSSRDS(ON)ID@VGS CEP01N65650V10.5Ω1.3A10V CEF01N65650V10.5Ω1.3A10V CEB01N65650V10.5Ω1.3A10V ■SuperhighdensecelldesignforextremelylowRDS(ON). ■Highpowerandcurrenthandingcapability. ■ | CETChino-Excel Technology 华瑞华瑞股份有限公司 | | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET/華瑞 |
24+ |
NA/ |
20000 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
|||
CET |
25+ |
TO-220F |
865 |
原装正品,假一罚十! |
|||
CET/華瑞 |
22+ |
TO-220 |
100000 |
代理渠道/只做原装/可含税 |
|||
CET |
21+ |
TO-220F |
865 |
原装现货假一赔十 |
|||
CET |
804+ |
TO-220F |
865 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
CET |
23+ |
TO220/3 |
7000 |
绝对全新原装!100%保质量特价!请放心订购! |
|||
CET |
24+ |
TO2203 |
1855 |
||||
CET华瑞 |
22+ |
3000 |
绝对进口原装现货TO-220F09+ |
||||
恩XP |
24+ |
BGA48 |
11016 |
公司现货库存,支持实单 |
|||
CET |
TO-220F |
50000 |
一级代理 原装正品假一罚十价格优势长期供货 |
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