位置：首页 > IC中文资料第9559页 > QFN
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
QFN | Silver Wirebonding KEYFEATURES Ag-AlloywireissofterthanCuwireresultinginlowerAl-Splashandlowerriskofbondpaddamage Ag-Alloywirehasawideprocesswindowthatimprovesmanufacturabilityfordeviceswithfragilebondpadstructures | amkorAmkor Technology 安靠封装测试安靠封装测试（上海）有限公司 |  |   |
QFN | Quad Flat No-Lead Package 文件：530 Kbytes Page：2 Pages | STATSCHIPSTATS ChipPAC, Ltd. 台湾星科金朋半导体股份有限公司 |  | |
QFN | Saw MLF PEL (Plated End Lead) Package 文件：754.36 Kbytes Page：3 Pages | amkorAmkor Technology 安靠封装测试安靠封装测试（上海）有限公司 | | |
QFN | NiCr Thin Film, Top-Contact Resistor 文件：77.06 Kbytes Page：3 Pages | VishayVishay Siliconix 威世科技威世科技半导体 |  | |
(4x4x0.75mm) MIN 0.700 MAX 0.800 QFN-16B(4x4x0.75mm) | AMEAnalog Microelectronics 安茂安茂微电子股份有限公司 |  | | |
(3x3x0.75mm) MIN 0.700 MAX 0.800 QFN-16C(3x3x0.75mm) | AMEAnalog Microelectronics 安茂安茂微电子股份有限公司 | | | |
DC-40GHz QFN w/ Air Cavity (Al2O3) Al2O3QFNw/AirCavityFeatures: •6Sizes:3mmto8mm •HTCCAl2O3 •HermeticallySealable •AirCavityDesign •BroadbandPerformance •RoHSCompliant •ENEPIGPlated •JEDECMO-220Footprint | BARRY Vishay Barry |  | | |
DC-40GHz QFN w/ Air Cavity (Al2O3) Al2O3QFNw/AirCavityFeatures: •6Sizes:3mmto8mm •HTCCAl2O3 •HermeticallySealable •AirCavityDesign •BroadbandPerformance •RoHSCompliant •ENEPIGPlated •JEDECMO-220Footprint | BARRY Vishay Barry | | | |
DC-40GHz QFN w/ Air Cavity (Al2O3) Al2O3QFNw/AirCavityFeatures: •6Sizes:3mmto8mm •HTCCAl2O3 •HermeticallySealable •AirCavityDesign •BroadbandPerformance •RoHSCompliant •ENEPIGPlated •JEDECMO-220Footprint | BARRY Vishay Barry | | | |
HIGH EFFICIENCY 1X/1.5X/2X CHARGE PUMP FOR WHITE LED APPLICATIONS GeneralDescription TheAP3156isalownoise,constantfrequencychargepumpDC/DCconverterthatusesatri-modeloadswitch(1X),fractional(1.5X),anddoubling(2X)conversiontomaximizeefficiencyforwhiteLEDapplications.TheAP3156iscapableofdrivingtheLEDchannelsat120mAmaximu | DIODESDiodes Incorporated 美台半导体 |  | | |
DC-40GHz QFN w/ Air Cavity (Al2O3) Al2O3QFNw/AirCavityFeatures: •6Sizes:3mmto8mm •HTCCAl2O3 •HermeticallySealable •AirCavityDesign •BroadbandPerformance •RoHSCompliant •ENEPIGPlated •JEDECMO-220Footprint | BARRY Vishay Barry | | | |
DC-40GHz QFN w/ Air Cavity (Al2O3) Al2O3QFNw/AirCavityFeatures: •6Sizes:3mmto8mm •HTCCAl2O3 •HermeticallySealable •AirCavityDesign •BroadbandPerformance •RoHSCompliant •ENEPIGPlated •JEDECMO-220Footprint | BARRY Vishay Barry | | | |
DC-40GHz QFN w/ Air Cavity (Al2O3) Al2O3QFNw/AirCavityFeatures: •6Sizes:3mmto8mm •HTCCAl2O3 •HermeticallySealable •AirCavityDesign •BroadbandPerformance •RoHSCompliant •ENEPIGPlated •JEDECMO-220Footprint | BARRY Vishay Barry | | | |
DC-40GHz QFN w/ Air Cavity (Al2O3) Al2O3QFNw/AirCavityFeatures: •6Sizes:3mmto8mm •HTCCAl2O3 •HermeticallySealable •AirCavityDesign •BroadbandPerformance •RoHSCompliant •ENEPIGPlated •JEDECMO-220Footprint | BARRY Vishay Barry | | | |
DC-40GHz QFN w/ Air Cavity (Al2O3) Al2O3QFNw/AirCavityFeatures: •6Sizes:3mmto8mm •HTCCAl2O3 •HermeticallySealable •AirCavityDesign •BroadbandPerformance •RoHSCompliant •ENEPIGPlated •JEDECMO-220Footprint | BARRY Vishay Barry | | | |
DC-40GHz QFN w/ Air Cavity (Al2O3) Al2O3QFNw/AirCavityFeatures: •6Sizes:3mmto8mm •HTCCAl2O3 •HermeticallySealable •AirCavityDesign •BroadbandPerformance •RoHSCompliant •ENEPIGPlated •JEDECMO-220Footprint | BARRY Vishay Barry | | | |
DC-40GHz QFN w/ Air Cavity (Al2O3) Al2O3QFNw/AirCavityFeatures: •6Sizes:3mmto8mm •HTCCAl2O3 •HermeticallySealable •AirCavityDesign •BroadbandPerformance •RoHSCompliant •ENEPIGPlated •JEDECMO-220Footprint | BARRY Vishay Barry | | | |
DC-40GHz QFN w/ Air Cavity (Al2O3) Al2O3QFNw/AirCavityFeatures: •6Sizes:3mmto8mm •HTCCAl2O3 •HermeticallySealable •AirCavityDesign •BroadbandPerformance •RoHSCompliant •ENEPIGPlated •JEDECMO-220Footprint | BARRY Vishay Barry | | | |
DC-40GHz QFN w/ Air Cavity (Al2O3) Al2O3QFNw/AirCavityFeatures: •6Sizes:3mmto8mm •HTCCAl2O3 •HermeticallySealable •AirCavityDesign •BroadbandPerformance •RoHSCompliant •ENEPIGPlated •JEDECMO-220Footprint | BARRY Vishay Barry | | | |
DC-40GHz QFN w/ Air Cavity (Al2O3) Al2O3QFNw/AirCavityFeatures: •6Sizes:3mmto8mm •HTCCAl2O3 •HermeticallySealable •AirCavityDesign •BroadbandPerformance •RoHSCompliant •ENEPIGPlated •JEDECMO-220Footprint | BARRY Vishay Barry | | | |
DC-40GHz QFN w/ Air Cavity (Al2O3) Al2O3QFNw/AirCavityFeatures: •6Sizes:3mmto8mm •HTCCAl2O3 •HermeticallySealable •AirCavityDesign •BroadbandPerformance •RoHSCompliant •ENEPIGPlated •JEDECMO-220Footprint | BARRY Vishay Barry | | | |
DC-40GHz QFN w/ Air Cavity (Al2O3) Al2O3QFNw/AirCavityFeatures: •6Sizes:3mmto8mm •HTCCAl2O3 •HermeticallySealable •AirCavityDesign •BroadbandPerformance •RoHSCompliant •ENEPIGPlated •JEDECMO-220Footprint | BARRY Vishay Barry | | | |
DC-40GHz QFN w/ Air Cavity (Al2O3) Al2O3QFNw/AirCavityFeatures: •6Sizes:3mmto8mm •HTCCAl2O3 •HermeticallySealable •AirCavityDesign •BroadbandPerformance •RoHSCompliant •ENEPIGPlated •JEDECMO-220Footprint | BARRY Vishay Barry | | | |
DC-40GHz QFN w/ Air Cavity (Al2O3) Al2O3QFNw/AirCavityFeatures: •6Sizes:3mmto8mm •HTCCAl2O3 •HermeticallySealable •AirCavityDesign •BroadbandPerformance •RoHSCompliant •ENEPIGPlated •JEDECMO-220Footprint | BARRY Vishay Barry | | | |
DC-40GHz QFN w/ Air Cavity (Al2O3) Al2O3QFNw/AirCavityFeatures: •6Sizes:3mmto8mm •HTCCAl2O3 •HermeticallySealable •AirCavityDesign •BroadbandPerformance •RoHSCompliant •ENEPIGPlated •JEDECMO-220Footprint | BARRY Vishay Barry | | | |
Flexible Non-Twistable Waveguide Features: *LowVSWR *LowInsertionLoss Applications: *Wireless *Transmitter *LaboratoryTest *Instrumentation | QUALWAVEQualwave Inc. All rights reserved. 扩维微波成都扩维微波技术有限公司 |  | | |
40 x 40 mm (1600mm2) 文件：205.19 Kbytes Page：3 Pages | TOREXTorex Semiconductor 特瑞仕特瑞仕半导体株式会社 |  | | |
Packaging Information / Reference Pattern Layout Dimensions 文件：210.69 Kbytes Page：3 Pages | TOREXTorex Semiconductor 特瑞仕特瑞仕半导体株式会社 | | | |
CONTROLLING DIMENSION IS MILLIMETER 文件：73.43 Kbytes Page：1 Pages | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 |  | | |
PACKAGE DIMENSION 文件：17.73 Kbytes Page：1 Pages | KECKEC CORPORATION KEC株式会社 |  | | |
PACKAGE DIMENSION 文件：17.73 Kbytes Page：1 Pages | KECKEC CORPORATION KEC株式会社 | | | |
PACKAGE DIMENSION 文件：17.73 Kbytes Page：1 Pages | KECKEC CORPORATION KEC株式会社 | | | |
Package, Reel, Taping 文件：185.04 Kbytes Page：1 Pages | ELM-TECHELM Technology Corporation 榆木科技榆木科技股份公司 |  | | |
(4x4x0.75mm) Carrier Width (W) 12.0-0.1 mm Pitch (P) 4.0-0.1 mm 文件：36.18 Kbytes Page：1 Pages | AMEAnalog Microelectronics 安茂安茂微电子股份有限公司 | | | |
(3x3x0.75mm) Carrier Width (W) 12.0-0.1 mm Pitch (P) 4.0-0.1 mm 文件：27.43 Kbytes Page：1 Pages | AMEAnalog Microelectronics 安茂安茂微电子股份有限公司 | | | |
包装：散装 描述：BREAKOUT BOARD 原型开发，制造品 适配器，分接板 | TI2Texas Instruments 德州仪器美国德州仪器公司 |  | | |
CONTROLLING DIMENSION IS MILLIMETER 文件：77.81 Kbytes Page：1 Pages | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | | | |
CONTROLLING DIMENSION IS MILLIMETER 文件：66.88 Kbytes Page：1 Pages | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | | | |
Reference Pattern Layout Dimensions 文件：219.57 Kbytes Page：4 Pages | TOREXTorex Semiconductor 特瑞仕特瑞仕半导体株式会社 | | | |
(4x4x0.75mm) Carrier Width (W) 12.0-0.1 mm Pitch (P) 4.0-0.1 mm 文件：27.43 Kbytes Page：1 Pages | AMEAnalog Microelectronics 安茂安茂微电子股份有限公司 | | | |
(4x4x0.75mm) MIN 0.700 MAX 0.800 文件：32.439 Kbytes Page：1 Pages | AMEAnalog Microelectronics 安茂安茂微电子股份有限公司 | | | |
Digital Input Class-D Speaker Amplifier with Audio Processing and mono headphone amplifier 文件：1.09037 Mbytes Page：34 Pages | TI1Texas Instruments 德州仪器美国德州仪器公司 |  | | |
Reference Pattern Layout Dimensions 文件：335.31 Kbytes Page：4 Pages | TOREXTorex Semiconductor 特瑞仕特瑞仕半导体株式会社 | | | |
Dual-Port, Differential VDSL2 Line Driver Amplifiers 文件：1.31373 Mbytes Page：43 Pages | TITexas Instruments 德州仪器美国德州仪器公司 |  | | |
CONTROLLING DIMENSION IS MILLIMETER 文件：74.5 Kbytes Page：1 Pages | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 | | | |
Package Outline 文件：129.139 Kbytes Page：1 Pages | GMTGlobal Mixed-mode Technology Inc 致新科技 |  | | |
Low-power sleep mode On-hook transmission Loop or ground start operation Smooth polarity reversal 文件：671.71 Kbytes Page：38 Pages | SILABS Silicon Laboratories |  | | |
Package Outline 文件：185.47 Kbytes Page：1 Pages | GMTGlobal Mixed-mode Technology Inc 致新科技 | | | |
Package Outline 文件：125.13 Kbytes Page：1 Pages | GMTGlobal Mixed-mode Technology Inc 致新科技 | | | |
Package Outline 文件：186.66 Kbytes Page：1 Pages | GMTGlobal Mixed-mode Technology Inc 致新科技 | | | |
CONTROLLING DIMENSION MILLIMETERS 文件：64.93 Kbytes Page：2 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 |  | | |
Package Outline 文件：127.44 Kbytes Page：1 Pages | GMTGlobal Mixed-mode Technology Inc 致新科技 | | | |
Package Outline 文件：190.27 Kbytes Page：1 Pages | GMTGlobal Mixed-mode Technology Inc 致新科技 | | | |
Package Outline 文件：189.09 Kbytes Page：1 Pages | GMTGlobal Mixed-mode Technology Inc 致新科技 | | | |
Package Outline 文件：128.759 Kbytes Page：1 Pages | GMTGlobal Mixed-mode Technology Inc 致新科技 | | | |
Package Outline 文件：127.91 Kbytes Page：1 Pages | GMTGlobal Mixed-mode Technology Inc 致新科技 | | | |
Socket/footprint card 文件：122.87 Kbytes Page：1 Pages | AtmelAtmel Corporation 爱特梅尔爱特梅尔公司 |  | | |
Package Outline 文件：140.58 Kbytes Page：1 Pages | GMTGlobal Mixed-mode Technology Inc 致新科技 | | | |
Package Outline 文件：227.41 Kbytes Page：1 Pages | GMTGlobal Mixed-mode Technology Inc 致新科技 | | | |
Package Outline 文件：239.82 Kbytes Page：1 Pages | GMTGlobal Mixed-mode Technology Inc 致新科技 | | |
QFN产品属性
- 类型
描述
- 型号
QFN
- 制造商
STATSCHIP
- 制造商全称
STATSCHIP
- 功能描述
Quad Flat No-Lead Package
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
N/A |
25+23+ |
QFN |
29329 |
绝对原装正品全新进口深圳现货 |
|||
24+ |
7 |
||||||
INSIDE |
2447 |
BGA |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
STARMICRONIC |
23+ |
65480 |
|||||
TOPLINE |
16+ |
QFN |
42 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
FAIRCHILD |
21+ |
DNA |
173 |
公司现货,有挂就有货。 |
|||
TOPLINE |
23+ |
QFN |
50000 |
全新原装正品现货,支持订货 |
|||
23+ |
QFN24 |
3000 |
一级代理原厂VIP渠道,专注军工、汽车、医疗、工业、 |
||||
SiemenS |
24+ |
PQFP100 |
3000 |
只做原装正品现货 欢迎来电查询15919825718 |
|||
SIEMENS |
00+ |
PQFP100 |
56 |
全新原装100真实现货供应 |
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2019-3-7
DdatasheetPDF页码索引
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