PLASTIC INFRARED LIGHT EMITTING DIODE

DESCRIPTION The QED522/523 is an 880 nm AlGaAs LED encapsulated in a clear, peach tinted, plastic TO-46 package. FEATURES • λ= 880 nm • Chip material = AlGaAs • Package type: Plastic TO-46 • Matched Photosensor: QSD722/723/724 • Narrow Emission Angle, 20° • High Output Power • Package mat

AIGAAS INFRARED EMITTING DIODE

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封装/外壳：TO-46-2 包装：散装 描述：EMITTER IR 880NM 100MA TO-46 光电器件 LED 发射器 - 红外，紫外，可见光

AIGAAS INFRARED EMITTING DIODE

7 AMPERES DARLINGTON POWER TRANSISTORS NPN SILICON 450 VOLTS 75 WATTS

Power Transistor mainly intended for use as ignition circuit output transistor. • Specified minimum sustaining voltage: VCER(sus) = 425 V at IC = 1 A • High S.O.A. capability: VCE = 400 V • Low VCE(sat) = 2.0 V max. at IC = 4 A

Wideband Variable-Gain Amplifier

文件：281.06 Kbytes Page：8 Pages

Wideband Variable-Gain Amplifier

文件：281.06 Kbytes Page：8 Pages

Wideband Variable-Gain Amplifier

文件：281.06 Kbytes Page：8 Pages

Wideband Variable-Gain Amplifier

文件：281.06 Kbytes Page：8 Pages