PLASTIC INFRARED LIGHT EMITTING DIODE

DESCRIPTION The QED233 / QED234 is a 940 nm GaAs / AlGaAs LED encapsulated in a clear untinted, plastic T-1 3/4 package. FEATURES • λ = 940 nm • Chip material =GaAs with AlGaAs window • Package type: T-1 3/4 (5mm lens diameter) • Matched Photosensor: QSD122/123/124 • Medium Emission Angle,

Plastic Infrared Light Emitting Diode

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封装/外壳：径向，5mm 直径（T 1 3/4） 包装：散装 描述：EMITTER IR 940NM 100MA RADIAL 光电器件 LED 发射器 - 红外，紫外，可见光

GAAS INFRARED EMITTING DIODE

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GaAs 红外发光二极管

封装/外壳：径向，5mm 直径（T 1 3/4） 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：EMITTER IR 940NM 100MA RADIAL 光电器件 LED 发射器 - 红外，紫外，可见光

SILICON PNP TRANSISTOR

DESCRIPTION The BD234 is a silicon epitaxial-base PNP power transistor in Jedec SOT-32 plastic package inteded for use in medium power linear and switching applications. ■ SGS-THOMSON PREFERRED SALESTYPE ■ PNP TRANSISTOR

THREE TERMINAL ADJUSTABLE CURRENT SOURCES

Description The LM134/LM234/LM334 are 3-terminal adjustable current sources characterized by: ■ an operating current range of 10000: 1 ■ an excellent current regulation ■ a wide dynamic voltage range of 1V t 10V The current is determined by an external resistor without requiring oth

THREE TERMINAL ADJUSTABLE CURRENT SOURCES

Description The LM134/LM234/LM334 are 3-terminal adjustable current sources characterized by: ■ an operating current range of 10000: 1 ■ an excellent current regulation ■ a wide dynamic voltage range of 1V t 10V The current is determined by an external resistor without requiring oth

Silicon PNP Transistor Low Noise, High Gain Amplifier

Description: The NTE234 is a silicon PNP transistor in a TO92 type package designed especially for low noise preamplifier and small signal industrial amplifier applications. This device features low collector satu ration voltage, tight beta control, and excellent low noise characteristics

3-Terminal Adjustable Current Sources

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