PLASTIC INFRARED LIGHT EMITTING DIODE

DESCRIPTION The QEC11X is an 940 nm GaAs LED encapsulated in a clear peach tinted, plastic T-1 package. FEATURES • λ = 940 nm • Chip material = GaAs • Package type: T-1 (3mm) • Matched Photosensor: QSC112 • Narrow Emission Angle, 24° • High Output Power • Package material and color: Clear

GAAS INFRARED EMITTING DIODE

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封装/外壳：径向，3mm 直径（T-1） 包装：散装 描述：EMITTER IR 940NM 50MA RADIAL 光电器件 LED 发射器 - 红外，紫外，可见光

GAAS INFRARED EMITTING DIODE

封装/外壳：径向，3mm 直径（T-1） 包装：卷带（TR）剪切带（CT） 描述：EMITTER IR 940NM 50MA RADIAL 光电器件 LED 发射器 - 红外，紫外，可见光

PNP SILICON BIAS RESISTOR TRANSISTOR

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The

0.25關m Sea of Gates and Customer Structured Arrays

DESCRIPTION Oki’s 0.25µm Application-Specific Integrated Circuit (ASIC) products are available in both Sea Of Gates (SOG) and Customer Structured Array (CSA) architectures. Both the SOG-based MG115P series and the CSA-based MG75P series use a five-layer metal process on 0.25µm drawn (0.18µm L-eff

6-Pin DIP Optoisolators Darlington Output

6-Pin DIP Optoisolators Darlington Output The MTIL113 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This device is designed for use in applications requiring high collector output currents at lower input currents

Reference Diode

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Reference Diode

文件：126.55 Kbytes Page：4 Pages