SUBMINIATURE PLASTIC INFRARED EMITTING DIODE

Features ■ T-3/4 (2mm) Surface Mount Package ■ Tape & Reel Option (See Tape & Reel Specifications) ■ Lead Form Options: Gullwing, Yoke, Z-Bend ■ Narrow Emission Angle, 24° ■ Wavelength = 875nm, AlGaAs ■ Clear Lens ■ Matched Photosensor: QSB363 ■ High Radiant Intensity

亚微型塑料红外发光二极管

QEB373 •T-3/4 (2mm)表贴封装\n•卷带和卷盘选件（请参阅“卷带和卷盘”规格）\n•引线形状选项： 鸥翼式、磁轭、Z型弯\n•窄发射角，24°\n•波长 = 880 nm，砷化铝镓\n•透明镜头\n•匹配的感光器： QSB363\n•高辐射强度;

封装/外壳：轴向 包装：散装 描述：EMITTER IR 875NM 50MA AXIAL 光电器件 LED 发射器 - 红外，紫外，可见光

Subminiature Plastic Infrared Emitting Diode

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Subminiature Plastic Infrared Emitting Diode

文件：513.03 Kbytes Page：5 Pages

封装/外壳：2-SMD，轭形弯曲 包装：散装 描述：EMITTER IR 875NM 50MA SMD 光电器件 LED 发射器 - 红外，紫外，可见光

High Voltage Darlington Transistors

High Voltage Darlington Transistors NPN Silicon

SIPMOS Small-Signal Transistor (N channel Enhancement mode Avalanche rated)

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Square Type □ 5.0 mm × 5.0 mm Series

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□ 5.0 mm × 5.0 mm Series

Silicon Complementary Transistors Audio Amplifier, Driver

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