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型号 功能描述 生产厂家 企业 LOGO 操作

丝印代码:T146;Digital transistors (built-in resistor)

Features In addition to the features of regular digital transistors, 1) Low VCE(sat) makes these transistors optimal for muting circuits. VCE(sat) = 40mV (Typ.) (IC/IB = 50mA/2.5mA) 2) They can be used at high current (IC = 600mA).

ROHM

罗姆

Silicon NPN Transistor RF Power Amp, PO = 4W

Description: The NTE363 is a 12.5V epitaxial silicon NPN planer transistor designed primarily for UHF communications. Features: ● Designed for UHF Military and Commercial Equipment ● 4W (Min) with Greater than 8dB Gain ● Withstands Infinite VSWR Under Operating Conditions ● Low Inductance St

NTE

LM363 Precision Instrumentation Amplifier

文件:452.17 Kbytes Page:22 Pages

NSC

国半

丝印代码:C363ES;Digital transistors (built-in resistors)

文件:105.46 Kbytes Page:4 Pages

ROHM

罗姆

LM363 Precision Instrumentation Amplifier

文件:452.17 Kbytes Page:22 Pages

NSC

国半

更新时间:2026-5-19 11:55:01
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
ROHM
26+
TO-220
86720
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25+
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SMD
5500
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25+23+
Sot-23
30128
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23+
SOT-23
22376
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23+
SOT23
7300
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23+
SOT-23
50000
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24+
SOT-23
9000
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16+
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2000
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