SUBMINIATURE PLASTIC INFRARED EMITTING DIODE

Features ■ T-3/4 (2mm) Surface Mount Package ■ Tape & Reel Option (See Tape & Reel Specifications) ■ Lead Form Options: Gullwing, Yoke, Z-Bend ■ Narrow Emission Angle, 24° ■ Wavelength = 940nm, GaAs ■ Clear Water Lens ■ Matched Photosensor: QSB363 ■ High Radiant Intensity

Subminiature Plastic Infrared Emitting Diode

Features ■ T-3/4 (2mm) Surface Mount Package ■ Tape & Reel Option (See Tape & Reel Specifications) ■ Lead Form Options: Gullwing, Yoke, Z-Bend ■ Narrow Emission Angle, 24° ■ Wavelength = 940nm, GaAs ■ Clear Water Lens ■ Matched Photosensor: QSB363 ■ High Radiant Intensity

Subminiature Plastic Infrared Emitting Diode

Features ■ T-3/4 (2mm) Surface Mount Package ■ Tape & Reel Option (See Tape & Reel Specifications) ■ Lead Form Options: Gullwing, Yoke, Z-Bend ■ Narrow Emission Angle, 24° ■ Wavelength = 940nm, GaAs ■ Clear Water Lens ■ Matched Photosensor: QSB363 ■ High Radiant Intensity

超小型塑料红外发光二极管

QEB363 •T-3/4 (2mm)表面贴装封装\n•引线形状选项： 鸥翼式、磁轭、Z型弯\n•波长 = 940 nm，GaAs\n•匹配的感光器： QSB363\n•高辐射强度;

封装/外壳：轴向 包装：散装 描述：EMITTER IR 940NM 50MA AXIAL 光电器件 LED 发射器 - 红外，紫外，可见光

Subminiature Plastic Infrared Emitting Diode

文件：517.37 Kbytes Page：5 Pages

Subminiature Plastic Infrared Emitting Diode

Features ■ T-3/4 (2mm) Surface Mount Package ■ Tape & Reel Option (See Tape & Reel Specifications) ■ Lead Form Options: Gullwing, Yoke, Z-Bend ■ Narrow Emission Angle, 24° ■ Wavelength = 940nm, GaAs ■ Clear Water Lens ■ Matched Photosensor: QSB363 ■ High Radiant Intensity

Subminiature Plastic Infrared Emitting Diode

Features ■ T-3/4 (2mm) Surface Mount Package ■ Tape & Reel Option (See Tape & Reel Specifications) ■ Lead Form Options: Gullwing, Yoke, Z-Bend ■ Narrow Emission Angle, 24° ■ Wavelength = 940nm, GaAs ■ Clear Water Lens ■ Matched Photosensor: QSB363 ■ High Radiant Intensity

Subminiature Plastic Infrared Emitting Diode

文件：517.37 Kbytes Page：5 Pages

封装/外壳：2-SMD，轭形弯曲 包装：散装 描述：EMITTER IR 940NM 50MA SMD 光电器件 LED 发射器 - 红外，紫外，可见光

丝印代码：T146；Digital transistors (built-in resistor)

Features In addition to the features of regular digital transistors, 1) Low VCE(sat) makes these transistors optimal for muting circuits. VCE(sat) = 40mV (Typ.) (IC/IB = 50mA/2.5mA) 2) They can be used at high current (IC = 600mA).

Silicon NPN Transistor RF Power Amp, PO = 4W

Description: The NTE363 is a 12.5V epitaxial silicon NPN planer transistor designed primarily for UHF communications. Features: ● Designed for UHF Military and Commercial Equipment ● 4W (Min) with Greater than 8dB Gain ● Withstands Infinite VSWR Under Operating Conditions ● Low Inductance St

LM363 Precision Instrumentation Amplifier

文件：452.17 Kbytes Page：22 Pages

丝印代码：C363ES；Digital transistors (built-in resistors)

文件：105.46 Kbytes Page：4 Pages

LM363 Precision Instrumentation Amplifier

文件：452.17 Kbytes Page：22 Pages