IGBT驱动电源

QA152D是专为IGBT驱动器而设计的DC-DC模块电源，额定输出功率为4.8W。其采用了非对称式电压输出形式，尽可能减小IGBT的驱动损耗,并具有输入欠压保护功能。该产品适用于：1. 通用变频器2. 交流伺服驱动系统3. 电焊机4. 不间断电源(UPS) ·效率高达 87%\n·DIP 封装\n·隔离电压 4000VAC\n·隔离电容 3pF\n·工作温度范围: -40℃ ~ +85℃\n·输入欠压保护;

Silicon epitaxial planar type

Silicon epitaxial planar type For switching circuits ■ Features • Short reverse recovery time trr • Small terminal capacitance, Ct

Silicon epitaxial planar type

Features 1. Short reverse recovery time trr 2. Small terminal capacitance, Ct

Silicon epitaxial planar type

Silicon epitaxial planar type For switching circuits ■ Features • Short reverse recovery time trr • Small terminal capacitance, Ct

POWER TRANSISTORS(7A,300-400V,80W)

NPN SILICON POWER DARLINGTON TRANSISTORS . . . designed for use in automotive ignition, switching and motor control applications. FEATURES: ● Collector−Emitter Sustaining Voltage: VCEO(sus) = 300V (Min) - TIP150 = 350V (Min) - TIP151 = 400V

L-BAND SPDT SWITCH

DESCRIPTION The PPG152TA is an L-band SPDT (Single Pole Double Throw) GaAs FET switch which was developed for digital cellular or cordless telephone application. The device can operate from 100 MHz to 2.5 GHz, having the low insertion loss. It housed in as original 6 pin mini-mold that is smalle