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Q62价格
参考价格:¥7.1060
型号:Q62702P0016S005 品牌:Osram Opto Semiconductor 备注:这里有Q62多少钱,2024年最近7天走势,今日出价,今日竞价,Q62批发/采购报价,Q62行情走势销售排行榜,Q62报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
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Silizium-Fotoelement Silicon Photovoltaic Cell Features ●Especiallysuitableforapplicationsfrom400nmto1120nm ●Cathode=backcontact ●Mountingbybolt/nut Applications ●Forcontrolanddrivecircuits ●Lightpulsescanning ●Quantitativelightmeasurementsinthevisiblelightandnearinfraredrange | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
GaAs MMIC (Tri mode power amplifier for AMPS/ CDMA /TDMA portable cellular phones) GaAsMMIC ●TrimodepoweramplifierforAMPS/CDMA/TDMAportablecellularphones ●31dBmsaturatedoutputpower@PAE=55typ.29dBmlinearoutputpower@PAE=40typ. ●Fullyintegrated2stageamplifier ●Powerrampcontrol ●Inputmatchedto50ohms,simpleoutputmatch | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
PNP GERMANIUM RF TRANSISTOR PNPGermaniumRFTransistor foroutput,mixer,andoscillatorstagesupto900MHz AF239SisagermaniumPNPmesatransistorinTO72case(18A4DIN41876). Theleadsareelectricallyinsulatedfromthecase. | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
PNP GERMANIUM RF TRANSISTOR PNPGermaniumRFTransistor | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
PNP GERMANIUM RHF TRANSISTOR PNPGermaniumUHFTransistor formixerandoscillatorcircuitsupto900MHz | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
PNP GERMANIUM UHF TRANSISTOR PNPGermaniumUHFTransistor | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon Crossover Ring Quad Schottky Diode SiliconCrossoverRingQuadSchottkyDiode ●Mediumbarrierdiodefordoublebalancedmixers,phasedetectorsandmodulators | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon Crossover Ring Quad Schottky Diode (Low barrier diode for double balanced mixers, phase detectors and modulators) SiliconCrossoverRingQuadSchottkyDiode ●Lowbarrierdiodefordoublebalancedmixers,phasedetectorsandmodulators | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon Schottky Diode (DBS mixer application to 10 GHz Low noise figure Low barrier type) SiliconSchottkyDiode PreliminaryData ●DBSmixerapplicationto10GHz ●Lownoisefigure ●Lowbarriertype | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon Schottky Diode (DBS mixer application to 12 GHz Low noise figure Medium barrier type) SiliconSchottkyDiode PreliminaryData ●DBSmixerapplicationto12GHz ●Lownoisefigure ●Mediumbarriertype | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon Schottky Diode (Low barrier diode for mixer and detectors up to GHz frequencies) SiliconSchottkyDiode ●LowbarrierdiodeformixeranddetectorsuptoGHzfrequencies | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon Crossover Ring Quad Schottky Diode (High barrier diode for double balanced mixers, phase detectors and modulators) Features •Highbarrierdiodefordoublebalancedmixers,phasedetectorsandmodulators | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) SiliconPINDiode ●Highvoltagecurrentcontrolled ●RFresistorforRFattenuatorandswirches ●Freqencyrangeabove1MHz ●Lowresistanceandshortcarrierlifetime ●Forfrequenciesupto3GHz | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon Dual Schottky Diode (High barrier diode for balanced mixers, phase detectors and modulators) SiliconDualSchottkyDiode Features •Highbarrierdiodeforbalancedmixers,phasedetectorsandmodulators | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) ●PINdiodeforhighspeedswitchingofRFsignals ●Lowforwardresistance ●Verylowcapacitance ●Forfrequenciesupto3GHz | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon Schottky Diode (Low barrier diode for detectors up to GHz frequencies) SiliconSchottkyDiode •LowbarrierdiodefordetectorsuptoGHzfrequencies | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon Switching Diode Array (For high speed switching applications Common cathode) SiliconSwitchingDiodeArray •Forhighspeedswitchingapplications •Commoncathode | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon Switching Diode Array (For high speed switching applications Common anode) SiliconSwitchingDiodeArray •Forhighspeedswitchingapplications •Commonanode | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) ●PINdiodeforhighspeedswitchingofRFsignals ●Lowforwardresistance ●Verylowcapacitance ●Forfrequenciesupto3GHz | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) ●PINdiodeforhighspeedswitchingofRFsignals ●Lowforwardresistance ●Verylowcapacitance ●Forfrequenciesupto3GHz | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) ●PINdiodeforhighspeedswitchingofRFsignals ●Lowforwardresistance ●Verylowcapacitance ●Forfrequenciesupto3GHz | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon PIN Diode (PIN diode for high speed switching of RF signals Low forward resistance Very low capacitance For frequencies up to 3 GHz) ●PINdiodeforhighspeedswitchingofRFsignals ●Lowforwardresistance ●Verylowcapacitance ●Forfrequenciesupto3GHz | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) SiliconPINDiode ●Highvoltagecurrentcontrolled ●RFresistorforRFattenuatorandswirches ●Freqencyrangeabove1MHz ●Lowresistanceandshortcarrierlifetime ●Forfrequenciesupto3GHz | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) SiliconPINDiode ●Highvoltagecurrentcontrolled ●RFresistorforRFattenuatorandswirches ●Freqencyrangeabove1MHz ●Lowresistanceandshortcarrierlifetime ●Forfrequenciesupto3GHz | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon PIN Diode (High voltage current controlled RF resistor for RF attenuator and swirches Freqency range above 1 MHz) SiliconPINDiode ●Highvoltagecurrentcontrolled ●RFresistorforRFattenuatorandswirches ●Freqencyrangeabove1MHz ●Lowresistanceandshortcarrierlifetime ●Forfrequenciesupto3GHz | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon PIN Diode SiliconPINDiode ●HighvoltagecurrentcontrolledRFresistorforRFattenuatorandswirches ●Freqencyrangeabove1MHz ●Lowresistanceandshortcarrierlifetime ●Forfrequenciesupto3GHz | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon Schottky Diode (For mixer applications in the VHF/UHF range For high speed switching) •FormixerapplicationsintheVHF/UHFrange •Forhighspeedswitching | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Preliminary data Silicon RF Switching Diode (Low loss, low capacitance PIN-diode Band switch for TV-tuners) SiliconRFSwitchingDiode •Lowloss,lowcapacitancePIN-diode •BandswitchforTV-tuners •Seriesdiodeformobilecommunicationstransmit-receiveswitch | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon Switching Diode (For high speed switching applications) SiliconSwitchingDiode •Forhighspeedswitchingapplications | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon Switching Diode Array (Connected in series For high speed switching applications) •Connectedinseries •Forhighspeedswitchingapplications | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon Schottky Diode (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) SiliconSchottkyDiode ●General-purposediodesforhigh-speedswitching ●Circuitprotection ●Voltageclamping ●High-leveldetectingandmixing | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon Schottky Diode (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) SiliconSchottkyDiode ●General-purposediodesforhigh-speedswitching ●Circuitprotection ●Voltageclamping ●High-leveldetectingandmixing | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon Schottky Diode (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) SiliconSchottkyDiode ●General-purposediodesforhigh-speedswitching ●Circuitprotection ●Voltageclamping ●High-leveldetectingandmixing | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon Schottky Diode (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) SiliconSchottkyDiode ●General-purposediodesforhigh-speedswitching ●Circuitprotection ●Voltageclamping ●High-leveldetectionandmixing | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon Schottky Diode (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) SiliconSchottkyDiode ●General-purposediodesforhigh-speedswitching ●Circuitprotection ●Voltageclamping ●High-leveldetectionandmixing | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon Schottky Diode (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) SiliconSchottkyDiode ●General-purposediodesforhigh-speedswitching ●Circuitprotection ●Voltageclamping ●High-leveldetectionandmixing | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon Schottky Diode (General purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) SiliconSchottkyDiode ●Generalpurposediodesforhigh-speedswitching ●Circuitprotection ●Voltageclamping ●High-leveldetectingandmixing | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon Schottky Diode (General-purpose diodes for high-speed switching Circuit protection Voltage clamping) SiliconSchottkyDiode ●General-purposediodesforhigh-speedswitching ●Circuitprotection ●Voltageclamping ●High-leveldetectingandmixing ●SmallpackageSOD-323 | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon RF Switching Diode (Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss) SiliconRFSwitchingDiode •Designforuseinshuntconfiguration •Hightshuntsignalisolation •Lowshuntinsertionloss | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon Switching Diode Array (For high speed switching applications Common cathode) SiliconSwitchingDiodeArray •Forhighspeedswitchingapplications •Commoncathode •Internal(galvanic)isolatedDiodesArrays inonepackage | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon Switching Diodes (Switching applications High breakdown voltage) SiliconSwitchingDiodes ●Switchingapplications ●Highbreakdownvoltage | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon Switching Diode Array (For high speed switching applications Common cathode) SiliconSwitchingDiodeArray •Forhighspeedswitchingapplications •Commoncathode •Internal(galvanic)isolatedDiodesArrays inonepackage | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon Schottky Diode (DBS mixer application to 12GHz Medium barrier type Low capacitance) SiliconSchottkyDiode •DBSmixerapplicationto12GHz •Mediumbarriertype •Lowcapacitance | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon Schottky Diode (DBS mixer applications to 12 GHz Low noise figure Low barrier type) •DBSmixerapplicationsto12GHz •Lownoisefigure •Lowbarriertype | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon Schottky Diodes (Zero bias diode array for mixer and detectors up to GHz frequencies Crossover ring quad) SiliconSchottkyDiodes •ZerobiasdiodearrayformixeranddetectorsuptoGHzfrequencies •Crossoverringquad | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon Switching Diodes (High-speed, high-voltage switch) ●High-speed,high-voltageswitch | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Preliminary data Silicon RF Switching Diode (Design for use in shunt configuration High shunt signal isolation Low shunt insertion loss) SiliconRFSwitchingDiode •Designforuseinshuntconfiguration •Highshuntsignalisolation •Lowshuntinsertionloss | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) SiliconSchottkyDiodes •Forlow-loss,fast-recovery,meterprotection,biasisolationandclampingapplications •Integrateddiffusedguardring •Lowforwardvoltage | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) SiliconSchottkyDiodes •Forlow-loss,fast-recovery,meterprotection,biasisolationandclampingapplications •Integrateddiffusedguardring •Lowforwardvoltage | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) SiliconSchottkyDiodes •Forlow-loss,fast-recovery,meterprotection,biasisolationandclampingapplications •Integrateddiffusedguardring •Lowforwardvoltage | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon Schottky Diodes (For low-loss, fast-recovery, meter protection, bias isolation and clamping applications Integrated diffused guard ring) SiliconSchottkyDiodes •Forlow-loss,fast-recovery,meterprotection,biasisolationandclampingapplications •Integrateddiffusedguardring •Lowforwardvoltage | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor General-purpose diodes for high-speed switching) Features •HiRelDiscreteandMicrowaveSemiconductor •General-purposediodesforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •Hermeticallysealedmicrowavepackage •eesaqualified •ESA/SCCDetailSpec.No.:5512/020 | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor General-purpose diodes for high-speed switching Circuit protection) HiRelSiliconSchottkyDiode Features •HiRelDiscreteandMicrowaveSemiconductor •General-purposediodesforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •Hermeticallysealedmicrowavepackage •ESAQualificationpending | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) Features •HiRelDiscreteandMicrowaveSemiconductor •Mediumbarrierdiodesfordetectorandmixerapplications •Hermeticallysealedmicrowavepackage •qualified •ESA/SCCDetailSpec.No.:5106/014 ESD:Electrostaticdischargesensitivedevice,observehandlingprecautions! | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon Schottky Diode (Rectifier Schottky diode for mobile communication Low voltage high inductane For power supply •RectifierSchottkydiodeformobilecommunication •Lowvoltagehighinductane •Forpowersupply •Forclampingandproptectioninlowvoltage application •Fordetectionandstep-up-conversion | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon Schottky Diodes (General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) Features •HiRelDiscreteandMicrowaveSemiconductor •General-purposediodesforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing •Hermeticallysealedmicrowavepackage •eesaqualified •ESA/SCCDetailSpec.No.:5512/020 | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
HiRel Silicon Schottky Diode (HiRel Discrete and Microwave Semiconductor Medium barrier diodes for detector and mixer applications) Features •HiRelDiscreteandMicrowaveSemiconductor •Mediumbarrierdiodesfordetectorandmixerapplications •Hermeticallysealedmicrowavepackage •qualified •ESA/SCCDetailSpec.No.:5106/014 ESD:Electrostaticdischargesensitivedevice,observehandlingprecautions! | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon Schottky Diode (General-purpose diode for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing) •General-purposediodeforhigh-speedswitching •Circuitprotection •Voltageclamping •High-leveldetectingandmixing | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon Schottky Diode (Rectifier Schottky diode with extreme low VF drop for mobile communication For power supply SiliconSchottkyDiode •RectifierSchottkydiodewithextremelowVFdropformobilecommunication •Forpowersupply •Forclampingandproptectioninlowvoltageapplication •Fordetectionandstep-up-conversion | SIEMENSSiemens Ltd 西门子德国西门子股份公司 | |||
Silicon Schottky Diode (Rectifier Schottky diode for mobile communication Low voltage high inductane For power supply •RectifierSchottkydiodeformobilecommunication •Lowvoltagehighinductane •Forpowersupply •Forclampingandproptectioninlowvoltage application •Fordetectionandstep-up-conversion | SIEMENSSiemens Ltd 西门子德国西门子股份公司 |
Q62产品属性
- 类型
描述
- 型号
Q62
- 功能描述
电线鉴定 CUSTOM PART FROM TYCO Q-CEE’S PART
- RoHS
否
- 制造商
TE Connectivity/Q-Cees
- 产品
Labels and Signs
- 材料
Vinyl
- 颜色
Blue
- 宽度
0.625 in
- 长度
1 in
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
INFINEON/英飞凌 |
23+ |
NA/ |
4260 |
原厂直销,现货供应,账期支持! |
|||
INFINEON |
SOT-23 |
699839 |
集团化配单-有更多数量-免费送样-原包装正品现货-正规 |
||||
INFINEON/英飞凌 |
23+ |
589610 |
新到现货 原厂一手货源 价格秒杀代理! |
||||
LITTELFUSE-力特 |
24+25+/26+27+ |
SMD-贴片 |
18800 |
一一有问必回一特殊渠道一有长期订货一备货HK仓库 |
|||
5000 |
公司存货 |
||||||
INFINEON/英飞凌 |
22+ |
SOT-23 |
20000 |
原装现货,实单支持 |
|||
INFINEON/英飞凌 |
22+ |
SOT-23 |
20000 |
原装现货,实单支持 |
|||
SIE |
23+ |
65480 |
|||||
INFINEON |
22+ |
SOT-23 |
28600 |
只做原装正品现货假一赔十一级代理 |
|||
INFINEON |
0509+ |
SOT-23 |
1010 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
Q62规格书下载地址
Q62参数引脚图相关
- s5230
- s510b
- s1100
- s101
- s007
- rtl8100c
- rs触发器
- rohs指令
- ROHS
- ricoh
- rf开关
- rfid技术
- rfid
- rc正弦波振荡电路
- rc低通滤波器
- rclamp0524p
- r803
- r800
- r31
- qsc6270
- Q7040K7
- Q7040J7
- Q7025R6
- Q7025P
- Q7025L6
- Q7025K6
- Q7025J6
- Q7015R6
- Q7015L6
- Q6X8E4
- Q6X8E3
- Q6X3RP
- Q6700
- Q6600
- Q646700
- Q646600
- Q636950
- Q636900
- Q636700
- Q636600
- Q62702P1674
- Q62702P1671
- Q62702P1668
- Q62702P1002
- Q62702P0999
- Q62702P0945
- Q62702P0942
- Q62702P0930
- Q62702P0859
- Q62702P0835
- Q62702P0273
- Q62702P0216
- Q62702P0215
- Q62702P0180
- Q62702P0178
- Q62702P0102
- Q62702P0030
- Q62702P0025
- Q62702P0017S001
- Q62702P0016S005
- Q60N-5
- Q60LAF
- Q-60D
- Q-60C
- Q-60B
- Q60-5
- Q6040P
- Q6040K7TP
- Q6040K7
- Q6040K5
- Q6040J7TP
- Q6040J7
- Q6035RH5
- Q6035P5
- Q6035NH5RP
- Q6030LH5
- Q6025R6TP
- Q6025R6
- Q6025R5
- Q6025P5
- Q6025P
- Q6025NH6RP
- Q6025N5
- Q6025LH5
- Q6025L6
- Q6025K6TP
- Q6025K6
- Q6025J6TP
- Q6025J6
- Q601E4
- Q601E3
Q62数据表相关新闻
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说明该集成电路美国贸易发展署4601/D是专为驱动,控制和保护开关在自激式反激式转换器功率晶体管用品以及为保护整体电源供应器。在干扰情况下,二次电压的上升是可以避免的。此外由于该集成电路的应用范围包括电视接收器磁带录像机,音响设备和活动扬声器,也可用于电力供应单位,由于其广泛的专业应用控制范围和高电压稳定在增加负载的变化。特点直接控制开关晶体管低启动电流倒车线性过载特性相应的电流驱动集电极电流成正比保护电路的干扰情况
2013-3-7Q67000-A8187-5 V低压降稳压器
特点•低电压降•极低的静态电流•低启动电流消耗•集成温度保护•带反极性保护•输入电压高达42V的•过压保护至65V(400毫秒)•短期短路保护•适合于汽车电子•宽温度范围•EMC的隔音(100伏/米)功能描述TLE4260,S是一个5V低压降的固定电压调节中的P
2013-1-13Q67000-A9108-智能六倍低边开关
这些多功能的开关电源控制IC包括数字和这需要设计高质量的模拟功能反激式,单端和推挽式转换器在正常,半桥和全桥配置。该组件也可以用于单端电压倍增和速度控制电机。电气操作故障确认集成运算放大器,其中激活保护功能。特点*前馈控制(嗡嗡声抑制)*对称输入,推挽式转换器“(TDA4700)*推挽输出*动态输出电流限制*过电压保护*欠压保护*软启动*双脉冲抑制
2012-11-12
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