Q45系列坚固的方形传感器

\n\n• Uses extremely rugged design that exceeds NEMA 6P and IEC IP67 standards and withstands 1200 psi washdown\n\n• Features highly visible LED indicators for Power, Signal and Output\n\n• Accommodates output timing logic or 7-segment LED signal strength display on standard models\n\n• Available in

Q45BB6 Series Sensors

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Q45BB6 Series Sensors

文件：731.87 Kbytes Page：10 Pages

包装：盒 描述：PHOTO SEN EMITTER 60M 传感器，变送器 光学传感器 - 光电，工业

PowerMOS transistor

GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications.

Quadruple ESD transient voltage suppressor

DESCRIPTION Monolithic transient voltage suppressor diode in a six lead SOT457 (SC-74) package for 4-bit wide ESD transient suppression at 5.6 V level. FEATURES • ESD rating >8 kV, according to IEC1000-4-2 • SOT457 surface mount package • Common anode configuration • Non-clamping range −0.5

High Speed Response Type OPIC Light Detector

■ Features 1. High speed response (t PHL : TYP.230ns ) 2. Uses a pattern to allow for possible positional deviation of the semiconductor laser spot. 3. Compact, mini-flat package ■ Applications 1. Laser beam printers

N-Channel Silicon JFET General Purpose Amp, Switch

Description: The NTE456 is an N–Channel junction silicon field–effect transistor in a TO72 type package designed for general purpose amplifier and switching applications.

Low-voltage avalanche regulator diodes

DESCRIPTION High performance voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-35) packages. The series consists of PLVA450A to PLVA468A. FEATURES • Very low dynamic impedance at low currents: approximately 1⁄20 of conventional series • Hard breakdown knee • Low noise: a