Features

• Covering the n257 band

• Integrated power amplifiers and low-noise amplifiers

• Supports four dual-polarity antennas

• 50Ω impedance at RF ports

• 6-bit phase and 6-bit attenuation control

• High linearity: 18.5 dBm output P1dB

• Low noise figure: 3.3 dB

• 3.15V and 1.8V dual-supply voltage

• High linear POUT supporting CP-OFDM 64 QAM

• Fast beam switching

• On-chip memory for 512 beams

• Independent control via SPI of all paths

• Packaging – 4.355 × 4.355 mm flip-chip die

Applications

• 5G base stations

• 5G customer premises equipment (CPE)

• Point-to-point radio