Applications

• Electric vehicle BEV traction drives

• Hybrid electric vehicle PHEV traction drives

• Electric vehicle on-board and off-board chargers

Description

The SIC1181KQ and SIC1182KQ are single channel gate drivers for

SiC MOSFETs. Reinforced galvanic isolation is provided by Power

Integrations’ revolutionary solid insulator FluxLink technology. Up to

±8 A peak output drive current enables the product to drive devices

with nominal currents of up to 600 / 800 A (typical).

Additional features such as undervoltage lock-out (UVLO) for

primary-side and secondary-side and rail-to-rail output with temperature

and process compensated output impedance guarantee safe

operation even in harsh conditions.

Furthermore, this gate driver IC comes along with short-circuit protection

(at and during turn-on phase) as well as overvoltage limitation by AAC

advanced active clamping (at turn-off phase) through a single sensing

pin. For SIC MOSFET with current-sense terminal, an adjustable

over-current detection can be realized.