General Description

This device is an extremely low reverse recovery

530 V silicon diode. Its recovery characteristics

increase efficiency, reduce EMI and eliminate

snubbers.

Applications

 High-voltage power rectifier

 Power factor correction (PFC) boost diode

 Motor drive circuits

 DC-AC inverters

Features

 Low QRR, low IRRM, low tRR

 High dIF/dt capable

 Soft recovery

Benefits

 Reduces peak reverse voltage

 Increases efficiency

 Eliminates need for snubber circuits

 Reduces EMI filter component size & count

 Enables extremely fast switching