General Description

These dual N Channel enhancement mode power field

effect transistors are using trench DMOS technology.

This advanced technology has been especially tailored

to minimize on-state resistance, provide superior

switching performance, and withstand high energy

pulse in the avalanche and commutation mode. These

devices are well suited for high efficiency fast switching

applications.

Features

 Fast switching

 Green Device Available

 Suit for 1.5V Gate Drive Applications

Applications

 Notebook

 Load Switch

 Networking

 Hand-held Instruments