General Description

These N-Channel enhancement mode power field effect

transistors are using trench DMOS technology. This

advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are

well suited for high efficiency fast switching applications

Features

 40V, 90A, RDS(ON)=5.5mΩ@VGS = 10V

 Improved dv/dt capability

 Fast switching

 Green Device Available

Applications

 Notebook

 Load Switch

 LED applications

 Hand-Held Device