General Description

Silicon VDMOS and LDMOS transistors designed specifically for broadband RF applications. Suitable for Military Radios, Cellular and Paging Amplifier Base Stations, Broadcast FM/AM, MRI, Laser Driver and others.

Polyfet process features

low feedback and output capacitances, resulting in high Ft transistors with high input impedance and high efficiency.

SILICON GATE ENHANCEMENT MODE RF POWER LDMOS TRANSISTOR

45.0 Watts Single Ended

Package Style LX2

HIGH EFFICIENCY, LINEAR HIGH GAIN, LOW NOISE ROHS COMPLIANT