description

The new BULDxx range of transistors have been designed specifically for use in High Frequency Electronic Ballasts (HFEB’s). This range of switching transistors has tightly controlled storage times and an integrated fast trr anti-parallel diode. The revolutionary design ensures that the diode has both fast forward and reverse recovery times, achieving the same performance as a discrete anti-parallel diode plus transistor.

● Designed Specifically for High Frequency Electronic Ballasts

● Integrated Fast trr Anti-parallel Diode, Enhancing Reliability

● Diode trr Typically 500 ns

● New Ultra Low-Height SOIC Power Package

● Tightly Controlled Transistor Storage Times

● Voltage Matched Integrated Transistor and Diode

● Characteristics Optimised for Cool Running

● Diode-Transistor Charge Coupling Minimised to Enhance Frequency Stability

● Custom Switching Selections Available

● Surface Mount and Through-Hole Options