DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the base connected to the flange.

FEATURES

• Interdigitated structure provides high emitter efficiency

• Diffused emitter ballasting resistors providing excellent

current sharing and withstanding a high VSWR

• Gold metallization realizes very stable characteristics

and excellent lifetime

• Multicell geometry gives good balance of dissipated

power and low thermal resistance.

• Input matching cell improves input impedance and

allows an easier design of wideband circuits.

APPLICATIONS

• Common base class-B power amplifiers under CW

conditions in military and professional applications up to

1.6 GHz.