DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the base connected to the flange.

FEATURES

• Interdigitated structure provides high emitter efficiency

• Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

• Gold metallization realizes very stable characteristics and excellent lifetime

• Multicell geometry gives good balance of dissipated power and low thermal resistance

• Internal input and output prematching ensures good stability and easy broadband use.

APPLICATIONS

• Common base class-B broadband amplifiers under CW conditions in military and professional applications.