DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package with base connected to the flange.

FEATURES

• Input and output matching cells allow an easier design of circuits

• Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

• Interdigitated structure provides high emitter efficiency

• Gold metallization realizes very stable characteristics and excellent lifetime

• Multicell geometry gives good balance of dissipated power and low thermal resistance.

APPLICATIONS

Common-base class C power amplifiers at frequencies between 1.5 and 1.8 GHz.