DESCRIPTION

NPN silicon planar epitaxial microwave power transistors.

The MX0912B100Y has a SOT439A metal ceramic flange package and improved output prematching cells. It is recommended for new designs.

The MZ0912B100Y has a SOT443A metal ceramic flange package with the base connected to the flange. It is mounted in common base configuration and specified in class C.

FEATURES

• Interdigitated structure provides high emitter efficiency

• Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

• Gold metallization realizes very stable characteristics and excellent lifetime

• Multicell geometry improves power sharing and low thermal resistance

• Input and output matching cell allows an easier design of circuits.

APPLICATIONS

• Common base class-C broadband pulse power amplifiers operating at 960 to 1215 MHz for TACAN application.