DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in a SOT443A metal ceramic flange package with the emitter connected to the flange.

FEATURES

• Interdigitated structure provides high emitter efficiency

• Diffused emitter ballasting resistor provides excellent current sharing and withstanding a high VSWR

• Gold metallization realizes very stable characteristics and excellent lifetime

• Multicell geometry gives good balance of dissipated power and low thermal resistance

• Internal input and output prematching ensures good stability and allows an easier design of wideband circuits.

APPLICATIONS

• Common emitter class A amplifiers in CW conditions for military and professional applications between 1.4 to 1.8 GHz.