DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in a SOT439A metal ceramic flange package, with emitter connected to flange.

FEATURES

• Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

• Interdigitated common-emitter structure provides high emitter efficiency

• Gold metallization realizes very good stability of the characteristics and excellent lifetime

• Multicell geometry gives good balance of dissipated power and low thermal resistance

• Internal input and output prematching ensures a good stability and allows an easier design of circuits.

APPLICATIONS

Intended for use in common-emitter, class AB amplifiers in CW conditions for professional applications between 1.5 GHz and 1.7 GHz.

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