DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in a SOT445B metal ceramic flange package, with emitter connected to the flange.

FEATURES

• Interdigitated structure provides high emitter efficiency

• Diffused emitter ballasting resistors providing excellent current sharing and withstanding a high VSWR

• Gold metallization realizes very stable characteristics and excellent lifetime

• Multicell geometry gives good balance of dissipated power and low thermal resistance.

• Input and output matching cell improves the impedances and facilitates the design of wideband circuits.

APPLICATIONS

Common emitter class A linear wideband power amplifiers in the 2.3 to 2.7 GHz band.