DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in a SOT445A metal ceramic flange package with the emitter connected to the flange.

FEATURES

• Interdigitated structure provides high emitter efficiency

• Diffused emitter ballasting resistor provides excellent

current sharing and withstanding a high VSWR

• Gold metallization realizes very stable characteristics

and excellent lifetime

• Multicell geometry gives good balance of dissipated

power and low thermal resistance

• Internal input and output prematching ensures good

stability and allows an easier design of wideband

circuits.

APPLICATIONS

• Common emitter class-A amplifiers in CW conditions for

military and professional applications in the 1.7 GHz to

2.1 GHz band.