DESCRIPTION

NPN silicon planar epitaxial microwave power transistor in a SOT440A metal ceramic flange package with the emitter connected to the flange.

FEATURES

• Interdigitated structure provides high emitter efficiency

• Diffused emitter ballasting resistors provide excellent

current sharing and withstanding a high VSWR

• Gold metallization realizes very stable characteristics

and excellent lifetime

• Multicell geometry gives good balance of dissipated

power and low thermal resistance

• Input matching cell allows an easier design of circuits.

APPLICATIONS

• Common emitter class-A linear power amplifiers up

to 2 GHz.