DESCRIPTION

The HEF4720B and HEF4720V are 256-bit, 1-bit per word random access memories with 3-state outputs. The memories are fully decoded and completely static. Recommended supply voltage range for HEF4720B is 3 to 15 V and for HEF4720V is 4,5 to 12,5 V; minimum stand-by voltage for both types is 3 V.

The use of LOCMOS gives the added advantage of very low stand-by power. The circuits can be directly interfaced with standard bipolar devices (TTL) without using special interface circuits. The memory operates from a single power supply.