DESCRIPTION

N-P-N silicon planar epitaxial transistor primarily intended for use in mobile radio transmitters in the 175 MHz commmunications band.

The transistor has a 6-lead flange envelope with a ceramic cap (SOT-119). All leads are isolated from the flange.

FEATURES

• multi-base structure and

emitter-ballasting resistors for an

optimum temperature profile

• gold metallization ensures

excellent reliability

• internal matching to achieve an

optimum wideband capability and

high power gain