General description

110 W LDMOS power transistor for base station applications at frequencies from 1800 MHz to 2000 MHz.

Features

■ Typical GSM EDGE performance at a frequency of 1930 MHz and 1990 MHz, a

supply voltage of 28 V and an IDq of 650 mA:

◆ Load power = 48 W (AV)

◆ Gain = 13.8 dB (typ)

◆ Efficiency = 38.5 (typ)

◆ ACPR400 = −61 dBc (typ)

◆ ACPR600 = −74 dBc (typ)

◆ EVMrms = 2.1 (typ)

■ Easy power control

■ Excellent ruggedness

■ High efficiency

■ Excellent thermal stability

■ Designed for broadband operation (1800 MHz to 2000 MHz)

■ Internally matched for ease of use

Applications

■ RF power amplifiers for GSM, GSM EDGE and CDMA base stations and multicarrier

applications in the 1800 MHz to 2000 MHz frequency range.