DESCRIPTION

Dual transistor with two silicon NPN RF dies in a surface mount 6-pin SOT363 (S-mini) package. The transistor is

primarily intended for wideband applications in the GHz-range in the RF front end of analog and digital cellular

phones, cordless phones, radar detectors, pagers and satellite TV-tuners.

FEATURES

• Small size

• Temperature and hFEmatched

• Low noise and high gain

• High gain at low current and low capacitance at low voltage

• Gold metallization ensures excellent reliability.

APPLICATIONS

• Oscillator and buffer amplifiers

• Balanced amplifiers

• LNA/mixers.