位置:PCDE1065G1 > PCDE1065G1详情

PCDE1065G1中文资料

厂家型号

PCDE1065G1

丝印代码

CDE1065G1

封装外壳

TO-263

文件大小

1829.55Kbytes

页面数量

5

功能描述

Silicon Carbide Schottky Barrier Diode

数据手册

下载地址一下载地址二到原厂下载

生产厂商

PANJIT

PCDE1065G1数据手册规格书PDF详情

Features

 Temperature Independent Switching Behavior

 High Surge Current Capability

 Positive Temperature Coefficient on VF

 Low Conduction Loss

 Zero Reverse Recovery

 High junction temperature 175 oC

 Lead free in compliance with EU RoHS 2.0

 Green molding compound as per IEC 61249 standard

Application

• PFC, UPS, PV Inverter, EV Charging Station, Welder

更新时间:2024-3-26 15:06:00
供应商 型号 品牌 批号 封装 库存 备注 价格
OEG
2023+环保现货
专业继电器
6800
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MOLEX/莫仕
2608+
/
295898
一级代理,原装现货