位置:AQW612EHAZ > AQW612EHAZ详情

AQW612EHAZ中文资料

厂家型号

AQW612EHAZ

文件大小

88.69Kbytes

页面数量

4

功能描述

Both NO and NC contacts incorporated in a compact DIP8-pin Reinforced insulation

固态继电器-PCB安装 PhotoMOS Relay

数据手册

下载地址一下载地址二到原厂下载

生产厂商

PANASONIC

AQW612EHAZ数据手册规格书PDF详情

FEATURES

1. 60V type couples high capacity (0.5A) with low on-resistance (typ. 1Ω).

2. Reinforced insulation 5,000 V

More than 0.4 mm internal insulation distance between inputs and outputs. Conforms to EN41003, EN60950 (reinforced insulation).

3. Aprrox. 1/2 the space compared with the mounting area of a set of 1 Form A and 1 Form B PhotoMOS

4. Applicable for 1 Form A 1 Form B use as well as two independent

1 Form A and 1 Form B use

5. Controls low-level analog signals

PhotoMOS feature extremely low closed circuit offset voltage to enable control of low-level analog signals without distortion.

6. High sensitivity and high speed response

Can control max. 0.14 A load current with 5 mA input current. Fast operation speed of typ. 0.5 ms [N.O.] (AQW610EH).

7. Low-level off-state leakage current

TYPICAL APPLICATIONS

• Power supply

• Measuring instruments

• Security equipment

• Modem

• Telephone equipment

• Electricity, plant equipment

• Sensing equipment

AQW612EHAZ产品属性

  • 类型

    描述

  • 型号

    AQW612EHAZ

  • 功能描述

    固态继电器-PCB安装 PhotoMOS Relay

  • RoHS

  • 制造商

    Omron Electronics

  • 负载电压额定值

    40 V

  • 负载电流额定值

    120 mA

  • 触点形式

    1 Form A(SPST-NO)

  • 输出设备

    MOSFET

  • 封装/箱体

    USOP-4

  • 安装风格

    SMD/SMT

更新时间:2026-2-17 14:16:00
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