NPN Silicon Planar Epitaxial Transistor

SOT−223 PACKAGE HIGH CURRENT NPN SILICON TRANSISTOR SURFACE MOUNT This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. SOT−223 package ensure

Bipolar Transistor

The UTC PZT751 is designed for power amplifier, regulator,and switching circuits where speed is important. Collector-Emitter voltage: VCEO=-80V Collector Dissipation: PD(MAX)=1.2W Low collector-Emitter saturation voltage Complementary of PNP PZT751;

NPN 双极晶体管

This NPN Bipolar Transistor is designed for use in industrial and consumer applications. The device is housed in the SOT-223 package, which is designed for medium power surface mount applications. • High Current: 2.0 Amp\n• The SOT-223 package can be soldered using wave or reflow.\n• SOT-223 package ensures level mounting, resulting in improved thermalconduction, and allows visual inspection of soldered joints. The formedleads absorb thermal stress during soldering, eliminating the possibilit;

HIGH CURRENT NPN SILICON TRANSISTOR SURFACE MOUNT

NPN Silicon Planar Epitaxial Transistor This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT–223 package which is designed for medium power surface mount applications. • High Current: 2.0 Amp • The SOT–223 package can

NPN Silicon Planar Epitaxial Transistor

SOT−223 PACKAGE HIGH CURRENT NPN SILICON TRANSISTOR SURFACE MOUNT This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. SOT−223 package ensure

NPN Silicon Planar Epitaxial Transistor

SOT−223 PACKAGE HIGH CURRENT NPN SILICON TRANSISTOR SURFACE MOUNT This NPN Silicon Epitaxial transistor is designed for use in industrial and consumer applications. The device is housed in the SOT−223 package which is designed for medium power surface mount applications. SOT−223 package ensure

NPN Silicon Planar Epitaxial Transistor

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NPN Silicon Planar Epitaxial Transistor

文件：64.78 Kbytes Page：4 Pages

三极管

封装/外壳：TO-261-4，TO-261AA 包装：剪切带（CT）带盒（TB） 描述：TRANS NPN 60V 2A SOT223 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

NPN SILICON POWER DARLINGTONS

PNP SILICON POWER DARLINGTONS ● Designed for Complementary Use with BD645, BD647, BD649 and BD651 ● 62.5 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● Minimum hFE of 750 at 3 V , 3 A

STEP-UP VOLTAGE CONVERTER WITH VOLTAGE MONITOR

DESCRIPTION The TK651xx low power step-up DC-DC converter is designed for portable battery powered systems, capable of operating from a single battery cell down to 0.9 V. The TK651xx provides the power switch and the control circuit for a boost converter. The converter takes a DC input and boosts

DIGITAL LOGIC GROUND ISOLATION LINE RECEIVER

Digital Logic Ground Isolation Line Receiver Microprocessor System Interfaces Switching Power Supply Feedback Control Analog Signal Isolation The TOSHIBA TLP651 consists of a GaAℓAs high−output light emitting diode and a high speed detector of one chip photo diode−transistor. This unit is 8

DUAL NPN MEDIUM POWER TRANSISTORS

SM-8 DUAL NPN MEDIUM POWER TRANSISTORS

NPN SILICON PLANAR MEDIUM POWER TRANSISTORS

FEATURES * 60 Volt VCEO * 2 Amp continuous current * Low saturation voltage * Ptot=1 Watt