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PZT2907价格
参考价格:¥0.4637
型号:PZT2907A 品牌:Fairchild 备注:这里有PZT2907多少钱,2025年最近7天走势,今日出价,今日竞价,PZT2907批发/采购报价,PZT2907行情走势销售排行榜,PZT2907报价。型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
---|---|---|---|---|
PZT2907 | PNPSiliconSwitchingTransistors PNPSiliconSwitchingTransistors ●HighDCcurrentgain:0.1mAto500mA ●Lowcollector-emittersaturationvoltage ●Complementarytypes:PZT2222(NPN) PZT2222A(NPN) | SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司 | ||
PZT2907 | SufaceMountSi-EpitaxialPlanarSwitchingTransistors •Powerdissipation1.3W •PlasticcaseSOT-223 •Weightapprox.0.04g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | DiotecDiotec Semiconductor 德欧泰克 | ||
SufaceMountSi-EpitaxialPlanarSwitchingTransistors •Powerdissipation1.3W •PlasticcaseSOT-223 •Weightapprox.0.04g •PlasticmaterialhasULclassification94V-0 •Standardpackagingtapedandreeled | DiotecDiotec Semiconductor 德欧泰克 | |||
PNPswitchingtransistor | ETC 知名厂家 | ETC | ||
SiliconPlanarMediumPowerTransistor DESCRIPTION •ThePZT2907Aisdesignedforgeneralpurposeamplifierandhigh-speedswitching,mediumpowerswitchingapplications. | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
NPNSiliconPlanarEpitaxialTransistor PNPSiliconPlanarEpitaxialTransistor P/bLead(Pb)-Free | SKTECHNOLGYSHIKE Electronics 时科广东时科微实业有限公司 | |||
PNPSiliconSwitchingTransistors PNPSiliconSwitchingTransistors ●HighDCcurrentgain:0.1mAto500mA ●Lowcollector-emittersaturationvoltage ●Complementarytypes:PZT2222(NPN) PZT2222A(NPN) | SIEMENSSiemens Semiconductor Group 西门子德国西门子股份公司 | |||
PNPGeneralPurposeAmplifier Description ThePN2907A,MMBT2907A,andPZT2907Aare60V-PNPbipolartransistorsdesignedforuseasageneral-purposeamplifierorswitchinapplicationsthatrequireupto500mA.Offeredinanultra-smallsurface-mountpackage(SOT-223),thePZT2907Aisidealforspace-constrainedsystems.T | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
PNPSILICONTRANSISTORSURFACEMOUNT PNPSiliconEpitaxialTransistor ThisPNPSiliconEpitaxialtransistorisdesignedforuseinlinearandswitchingapplications.ThedeviceishousedintheSOT-223packagewhichisdesignedformediumpowersurfacemountapplications. Features •NPNComplementisPZT2222AT1 •TheSOT-223pack | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
PNPswitchingtransistor DESCRIPTION PNPswitchingtransistorinaSOT223plasticpackage. NPNcomplement:PZT2222A. FEATURES •Highcurrent(max.600mA) •Lowvoltage(max.60V). APPLICATIONS •Switchingandlinearamplification. | PhilipsPhilips Semiconductors 飞利浦荷兰皇家飞利浦 | Philips | ||
SOT-223PACKAGEPNPSILICONTRANSISTORSURFACEMOUNT PNPSiliconEpitaxialTransistor ThisPNPSiliconEpitaxialtransistorisdesignedforuseinlinearandswitchingapplications.ThedeviceishousedintheSOT-223packagewhichisdesignedformediumpowersurfacemountapplications. •NPNComplementisPZT2222AT1 •TheSOT-223packagecanbe | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | |||
PNPTransistors ■Features ●Epitaxialplanardieconstruction ●ComplementarytoPZT2222A | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
PNPGENERALPURPOSEAMPLIFIER ■DESCRIPTION ThisUTCPZT2907Aisdesignedforuseasageneralpurposeamplifierandswitchrequiringcollectorcurrentsto500mA. | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
PNPPlastic-EncapsulateTransistors Features •SurfaceMountSOT-223Package •Capableof1WattsofPowerDissipation •Ic:0.6A •Marking:ZT2907A •OperatingandStorageJunctionTemperatures:-55°Cto150°C •EpoxymeetsUL94V-0flammabilityrating •MoistureSensitivityLevel1 •Halogenfreeavailableuponrequestbyadd | MCCMicro Commercial Components 美微科美微科半导体股份有限公司 | |||
PNPSiliconEpitaxialTransistor PNPSiliconEpitaxialTransistor ThisPNPSiliconEpitaxialtransistorisdesignedforuseinlinearandswitchingapplications.ThedeviceishousedintheSOT-223packagewhichisdesignedformediumpowersurfacemountapplications. Features •NPNComplementisPZT2222AT1 •TheSOT-223Pa | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
TRANSISTOR(PNP) FEATURES Powerdissipation PCM:1W(Tamb=25℃) Collectorcurrent ICM:-0.6A Collector-basevoltage V(BR)CBO:-60V Operatingandstoragejunctiontemperaturerange TJ,Tstg:-55℃to+150℃ | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳深圳市永而佳实业有限公司 | |||
PN2907A/MMBT2907A/PZT2907A60VPNPGeneralPurposeTransistor Description ThePN2907A,MMBT2907A,andPZT2907Aare60V-PNPbipolartransistorsdesignedforuseasageneral-purposeamplifierorswitchinapplicationsthatrequireupto500mA.Offeredinanultra-smallsurface-mountpackage(SOT-223),thePZT2907Aisidealforspace-constrainedsystems.T | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
SOT-223Plastic-EncapsulateTransistors TRANSISTOR(PNP) FEATURES •Epitaxialplanardieconstruction •ComplementaryPNPTypeavailable(PZT2222A) | JIANGSUJiangsu Changjiang Electronics Technology Co., Ltd 长电科技江苏长电科技股份有限公司 | |||
PNPswitchingtransistor FEATURES •Highcurrent(max.600mA) •Lowvoltage(max.60V). APPLICATIONS •Switchingandlinearamplification. DESCRIPTION PNPswitchingtransistorinaSOT223plasticpackage.NPNcomplement:PZT2222A. | NEXPERIANexperia B.V. All rights reserved 安世安世半导体(中国)有限公司 | |||
SOT-223Plastic-EncapsulateTransistors FEATURES Epitaxialplanardieconstruction ComplementaryPNPTypeavailable(PZT2222A) | DGNJDZNanjing International Group Co 南晶电子东莞市南晶电子有限公司 | |||
PNPSiliconEpitaxialPlanarTransistor Features HighCollectorCurrent LowCollector-emitterSaturationVoltage | TECHPUBLICTECH PUBLIC Electronics co LTD 台舟电子台舟电子股份有限公司 | |||
60VPNPGeneral-PurposeTransistor Features •HighDCCurrentGain(hFE)Range:100~300 •High-CurrentGainBandwidthProduct(fT): 200MHz(Minimum) •MaximumTurn-OnTime(ton):45ns •MaximumTurn-OffTime(toff):100ns •Ultra-SmallSurface-MountPackage:SOT-223(PZT2907A) Description ThePN2907A,MMBT2907A,and | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
PNPSiliconPlanarEpitaxialTransistor PNPSiliconPlanarEpitaxialTransistor P/bLead(Pb)-Free | WEITRON Weitron Technology | |||
PNPGENERALPURPOSEAMPLIFIER ■DESCRIPTION ThisUTCPZT2907Aisdesignedforuseasageneralpurposeamplifierandswitchrequiringcollectorcurrentsto500mA. | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
PNPGENERALPURPOSEAMPLIFIER ■DESCRIPTION ThisUTCPZT2907Aisdesignedforuseasageneralpurposeamplifierandswitchrequiringcollectorcurrentsto500mA. | UTCUnisonic Technologies 友顺友顺科技股份有限公司 | |||
SOT-223PACKAGEPNPSILICONTRANSISTORSURFACEMOUNT PNPSiliconEpitaxialTransistor ThisPNPSiliconEpitaxialtransistorisdesignedforuseinlinearandswitchingapplications.ThedeviceishousedintheSOT-223packagewhichisdesignedformediumpowersurfacemountapplications. •NPNComplementisPZT2222AT1 •TheSOT-223packagecanbe | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | |||
PNPSILICONTRANSISTORSURFACEMOUNT PNPSiliconEpitaxialTransistor ThisPNPSiliconEpitaxialtransistorisdesignedforuseinlinearandswitchingapplications.ThedeviceishousedintheSOT-223packagewhichisdesignedformediumpowersurfacemountapplications. Features •NPNComplementisPZT2222AT1 •TheSOT-223pack | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
PNPSiliconEpitaxialTransistor PNPSiliconEpitaxialTransistor ThisPNPSiliconEpitaxialtransistorisdesignedforuseinlinearandswitchingapplications.ThedeviceishousedintheSOT-223packagewhichisdesignedformediumpowersurfacemountapplications. Features •NPNComplementisPZT2222AT1 •TheSOT-223Pa | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
PNPSiliconEpitaxialTransistor PNPSiliconEpitaxialTransistor ThisPNPSiliconEpitaxialtransistorisdesignedforuseinlinearandswitchingapplications.ThedeviceishousedintheSOT-223packagewhichisdesignedformediumpowersurfacemountapplications. Features •NPNComplementisPZT2222AT1 •TheSOT-223Pa | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
PNPGeneralPurposeAmplifier 文件:97.03 Kbytes Page:7 Pages | FairchildFairchild Semiconductor 仙童半导体飞兆/仙童半导体公司 | |||
封装/外壳:TO-261-4,TO-261AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 60V 0.6A SOT223 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ETC 知名厂家 | ETC | ||
封装/外壳:TO-261-4,TO-261AA 包装:卷带(TR)剪切带(CT)Digi-Reel® 得捷定制卷带 描述:TRANS PNP 60V 0.6A SOT223 分立半导体产品 晶体管 - 双极性晶体管(BJT)- 单个 | ETC 知名厂家 | ETC | ||
PNPTransistors 文件:454.04 Kbytes Page:2 Pages | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | |||
SiliconPlanarMediumPowerTransistor 文件:297.44 Kbytes Page:2 Pages | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
PNPTRANSISTOR 文件:161.24 Kbytes Page:1 Pages | WINNERJOINSHENZHEN YONGERJIA INDUSTRY CO.,LTD 永而佳深圳市永而佳实业有限公司 | |||
SiliconPlanarMediumPowerTransistor 文件:178.15 Kbytes Page:2 Pages | SECOSSeCoS Halbleitertechnologie GmbH 喜可士喜可士股份有限公司 | |||
PNPSiliconEpitaxialTransistor 文件:108.22 Kbytes Page:4 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
PNPSiliconEpitaxialTransistor 文件:108.22 Kbytes Page:4 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
PNPSiliconEpitaxialTransistor 文件:108.22 Kbytes Page:4 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
PNPSiliconEpitaxialTransistor 文件:108.22 Kbytes Page:4 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
PNPSiliconEpitaxialTransistor 文件:108.22 Kbytes Page:4 Pages | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
60VPNPGeneral-PurposeTransistor Features •HighDCCurrentGain(hFE)Range:100~300 •High-CurrentGainBandwidthProduct(fT): 200MHz(Minimum) •MaximumTurn-OnTime(ton):45ns •MaximumTurn-OffTime(toff):100ns •Ultra-SmallSurface-MountPackage:SOT-223(PZT2907A) Description ThePN2907A,MMBT2907A,and | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
60VPNPGeneral-PurposeTransistor Features •HighDCCurrentGain(hFE)Range:100~300 •High-CurrentGainBandwidthProduct(fT): 200MHz(Minimum) •MaximumTurn-OnTime(ton):45ns •MaximumTurn-OffTime(toff):100ns •Ultra-SmallSurface-MountPackage:SOT-223(PZT2907A) Description ThePN2907A,MMBT2907A,and | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
PNPGeneral-PurposeTransistor Description Thisdeviceisdesignedforusewithgeneral−purposeamplifiersand switchesrequiringcollectorcurrentsto500mA. ThesedevicesarePb−Free,HalogenFree/BFRFree,BerylliumFree andareRoHScompliant. | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | |||
500mALOWDROPOUTVOLTAGEREGULATOR GENERALDESCRIPTION TheAMS2907seriesofadjustableandfixedvoltageregulatorsaredesignedtoprovide500mAoutputcurrentandtooperatedownto1Vinput-to-outputdifferential.Thedropoutvoltageofthedeviceisguaranteedmaximum1.3Vatmaximumoutputcurrent,decreasingatlowerloadc | ADMOS Advanced Monolithic Systems | |||
808MHzCenterFrequency 文件:44.39 Kbytes Page:2 Pages | KR KR Electronics, Inc. |
PZT2907产品属性
- 类型
描述
- 型号
PZT2907
- 功能描述
两极晶体管 - BJT PNP General Purpose
- RoHS
否
- 制造商
STMicroelectronics
- 晶体管极性
PNP 集电极—基极电压
- VCBO
集电极—发射极最大电压
- VCEO
- 40 V 发射极 - 基极电压
- VEBO
- 6 V
- 增益带宽产品fT
直流集电极/Base Gain hfe
- Min
100 A
- 安装风格
SMD/SMT
- 封装/箱体
PowerFLAT 2 x 2
IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SIEMENS/西门子 |
23+ |
SOT-223 |
89630 |
当天发货全新原装现货 |
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SIEMENS |
24+ |
SOT223 |
2987 |
只售原装自家现货!诚信经营!欢迎来电! |
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SOT223 |
68500 |
一级代理 原装正品假一罚十价格优势长期供货 |
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ON(安森美) |
2511 |
4650 |
电子元器件采购降本 30%!盈慧通原厂直采,砍掉中间差价 |
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ON原装 |
21+ |
SOT-223 |
12588 |
原装正品,自己库存 假一罚十 |
|||
INFINEON |
2023+ |
SOT-223 |
50000 |
原装现货 |
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ON |
23+ |
SOT223 |
30000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
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PHI |
24+ |
TO-223 |
6000 |
只做原厂渠道 可追溯货源 |
|||
ON |
25+ |
SOT223 |
6000 |
全新原装现货、诚信经营! |
|||
ON |
23+ |
SOT223 |
30000 |
正规渠道,只有原装! |
PZT2907规格书下载地址
PZT2907参数引脚图相关
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PZT2907数据表相关新闻
PYFZ-14-E
PYFZ-14-E
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2023-2-9PXV1220S-4DBN1-T02
PXV1220S-4DBN1-T02,全新.当天发货或门市自取,如需了解更多产品信息联系我们.零七五五.八二七三二二九一企鹅:一一七四零五二三五三,V:八七六八零五五八.
2021-6-28PXPTPU12FIM08XRJ010PU原装现货
深圳市大唐盛世半导体有限公司 手机:17727572380。13008842056 电话:0755-83226739 QQ:626839837。3160836686 微信号:15096137729。13008842056
2019-10-31PZU2.7DB2/DG全新原装现货
可立即发货
2019-9-24
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